High Current N Channel MOSFET HUAYI HY050N08P 85V 105A for Switch Applications and DC DC Converters
Key Attributes
Model Number:
HY050N08P
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
105A
RDS(on):
4.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.417nF
Output Capacitance(Coss):
1.649nF
Pd - Power Dissipation:
166W
Gate Charge(Qg):
64.3nC@10V
Mfr. Part #:
HY050N08P
Package:
TO-220FB-3L
Product Description
Product Overview
The HUAYI HY050N08P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It features an 85V/105A rating, low on-resistance (RDS(ON)= 4.7m typ.), 100% avalanche tested, and a reliable, rugged construction. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HUAYI
- Model: HY050N08P/B
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VDSS | Tc=25C Unless Otherwise Noted | - | - | 85 | V |
| VGSS | - | - | ±20 | V | ||
| TJ | - | - | 175 | °C | ||
| TSTG | - | -55 | - | 175 | °C | |
| ID | Tc=25°C | - | - | 105 | A | |
| ID | Tc=100°C | - | - | 74 | A | |
| PD | Tc=25°C | - | - | 166 | W | |
| PD | Tc=100°C | - | - | 83 | W | |
| Electrical Characteristics | BVDSS | VGS=0V,IDS=250μA | 85 | - | - | V |
| IDSS | VDS=85V,VGS=0V | - | - | 1 | μA | |
| VGS(th) | VDS=VGS, IDS=250μA | 2 | 3 | 4 | V | |
| IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA | |
| RDS(ON) | VGS=10V,IDS=40A | - | 4.7 | 5.5 | mΩ | |
| VSD | ISD=40A,VGS=0V | - | 0.9 | 1.2 | V | |
| trr | ISD=40A,dISD/dt=100A/μs | - | 53 | - | ns | |
| Dynamic Characteristics | RG | VGS=0V,VDS=0V,F=1 MHz | - | 3.8 | - | Ω |
| Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3417 | - | pF | |
| Coss | - | - | 1649 | - | pF | |
| Crss | - | - | 76 | - | pF | |
| td(ON) | VDD=20V,RG=4Ω, IDS=40A,VGS=10V | - | 20 | - | ns | |
| Tr | - | - | 30 | - | ns | |
| Gate Charge Characteristics | Qg | VDS =68V, VGS=10V, ID=30A | - | 64.3 | - | nC |
| Qgs | - | - | 15.2 | - | nC | |
| Qgd | - | - | 19.5 | - | nC |
2411220214_HUAYI-HY050N08P_C357994.pdf
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