Switching N Channel MOSFET HXY MOSFET SI2302 HXY with Low Gate Threshold and RDS ON in SOT 23 Package
Key Attributes
Model Number:
SI2302-HXY
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
27pF
Number:
1 N-channel
Input Capacitance(Ciss):
260pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
5nC@4.5V
Mfr. Part #:
SI2302-HXY
Package:
SOT-23
Product Description
Product Overview
The SI2302-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideal for battery protection and general switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Package: SOT-23
- Website: www.hxymos.com
Technical Specifications
| Product ID | N-Channel MOSFET | VDS (V) | ID (A) | RDS(ON) (m) | VGS(th) (V) | Package |
| SI2302-HXY | N-Channel Enhancement Mode | 20 | 2.8 | < 55 @ VGS=4.5V | 0.5 - 1.2 | SOT-23 |
2509181600_HXY-MOSFET-SI2302-HXY_C4748714.pdf
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