HXY MOSFET AO3400 ED N Channel MOSFET Featuring Low Gate Threshold and Suitable for Power Management
Key Attributes
Model Number:
AO3400-ED
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
27pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
260pF@10V
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
5nC@4.5V
Mfr. Part #:
AO3400-ED
Package:
SOT-23
Product Description
Product Overview
The AO3400-ED is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 2.5V. This device is ideally suited for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Model: AO3400-ED
- Package: SOT-23
- Marking: A09T
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 20 | 22 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.5 | 0.75 | 1.2 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=2A | - | 62 | 73 | m |
| VGS=4.5V, ID=2.8A | - | 43 | 55 | m | ||
| Forward Transconductance | gFS | VDS=5V,ID=3A | - | 8 | - | S |
| Input Capacitance | Clss | VDS=10V,VGS=0V, F=1.0MHz | - | 260 | - | PF |
| Output Capacitance | Coss | VDS=10V,VGS=0V, F=1.0MHz | - | 48 | - | PF |
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V, F=1.0MHz | - | 27 | - | PF |
| Turn-on Delay Time | td(on) | VDD=10V, RL=3.3 VGS=4.5V,RGEN=6 | - | 2.5 | - | nS |
| Turn-on Rise Time | tr | VDD=10V, RL=3.3 VGS=4.5V,RGEN=6 | - | 3.2 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=10V, RL=3.3 VGS=4.5V,RGEN=6 | - | 21 | - | nS |
| Turn-Off Fall Time | tf | VDD=10V, RL=3.3 VGS=4.5V,RGEN=6 | - | 3 | - | nS |
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=4.5V | - | 2.9 | 5 | nC |
| Gate-Source Charge | Qgs | VDS=10V,ID=3A, VGS=4.5V | - | 0.4 | - | nC |
| Gate-Drain Charge | Qg | VDS=10V,ID=3A, VGS=4.5V | - | 0.6 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=3.3A | - | 0.75 | 1.2 | V |
| Diode Forward Current | IS | VGS=0V | - | - | 3.3 | A |
| Drain-Source Voltage | VDS | - | - | - | 20 | V |
| Gate-Source Voltage | VGS | - | - | - | 12 | V |
| Drain Current-Continuous | ID | - | - | - | 3 | A |
| Drain Current-Pulsed | IDM | - | - | - | 12 | A |
| Maximum Power Dissipation | PD | TA=25 | - | - | 0.9 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | |
| Thermal Resistance,Junction-to-Ambient | RJA | TA=25 | - | 139 | - | /W |
2509181600_HXY-MOSFET-AO3400-ED_C4748722.pdf
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