Low Gate Voltage Operation HXY MOSFET IRLR8726T N Channel Enhancement Mode MOSFET with Excellent RDS
Key Attributes
Model Number:
IRLR8726T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
180pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
1.16nF@25V
Gate Charge(Qg):
11.1nC@15V
Mfr. Part #:
IRLR8726T
Package:
TO-252-2L
Product Description
Product Overview
The IRLR8726T is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: IRLR8726T
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: N-Channel Enhancement Mode MOSFET
- Package: TO-252-2L (TO-252-2(DPAK))
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current Continuous (TC=25) | 80 | A | |||
| ID | Drain Current Continuous (TC=100) | 51 | A | |||
| IDM | Drain Current Pulsed | 320 | A | |||
| EAS | Single Pulse Avalanche Energy | 88 | mJ | |||
| IAS | Single Pulse Avalanche Current | 42 | A | |||
| PD | Power Dissipation (TC=25) | 54 | W | |||
| PD | Power Dissipation Derate above 25 | 0.43 | W/ | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction to ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction to Case | 2.3 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.04 | V/ | ||
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=125 | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | 5 | 6.8 | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=10A | 6.5 | 9 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1 | 1.6 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -4 | mV/ | |||
| gfs | Forward Transconductance | VDS=10V , ID=10A | 18 | S | ||
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=20A | 11.1 | nC | ||
| Qgs | Gate-Source Charge | 1.85 | ||||
| Qgd | Gate-Drain Charge | 6.8 | ||||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=15A | 7.5 | ns | ||
| Tr | Rise Time | 14.5 | ||||
| Td(off) | Turn-Off Delay Time | 35.2 | ||||
| Tf | Fall Time | 9.6 | ||||
| Ciss | Input Capacitance | VDS=25V , VGS=0V , F=1MHz | 1160 | pF | ||
| Coss | Output Capacitance | VGS=0V, VDS=0V, F=1MHz | 200 | |||
| Crss | Reverse Transfer Capacitance | 180 | ||||
| Rg | Gate resistance | 2.5 | ||||
| EAS | Single Pulse Avalanche Energy | VDD=25V, L=0.1mH, IAS=20A | 20 | mJ | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 80 | A | ||
| ISM | Pulsed Source Current | 320 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1 | V | ||
| trr | Reverse Recovery Time | VGS=0V,IS=1A , di/dt=100A/s TJ=25 | ns | |||
| Qrr | Reverse Recovery Charge | nC |
2509181604_HXY-MOSFET-IRLR8726T_C5261061.pdf
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