N Channel Power MOSFET Huixin H15N65D Featuring Low Conduction Losses and Ultra Low Gate Charge for Switching
Key Attributes
Model Number:
H15N65D
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
RDS(on):
220mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.2pF
Number:
1 N-channel
Pd - Power Dissipation:
131W
Input Capacitance(Ciss):
1.21nF
Output Capacitance(Coss):
74pF
Gate Charge(Qg):
24.7nC@10V
Mfr. Part #:
H15N65D
Package:
TO-252
Product Description
Product Overview
The H15N65D is an N-Channel Super Junction Power MOSFET featuring new technology for high voltage devices. It offers low on-resistance, low conduction losses, and a small package with ultra-low gate charge for reduced driving requirements. This device is 100% avalanche tested and ROHS compliant, making it suitable for applications such as Power Factor Correction (PFC), Switched Mode Power Supplies (SMPS), and Uninterruptible Power Supplies (UPS).
Product Attributes
- Certifications: ROHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 3 - 4 | V | VDS=VGS, ID=250A |
| Drain-Source On-State Resistance | RDS(ON) | 220 - 260 | m | VGS=10V, ID=8A |
| Continuous Drain Current | ID (DC) | 15 | A | Tc=25C |
| Continuous Drain Current | ID (DC) | 10 | A | Tc=100C |
| Pulsed drain current | IDM (pluse) | 60 | A | Note 1 |
| Maximum Power Dissipation | PD | 131 | W | Tc=25C |
| Single pulse avalanche energy | EAS | 304 | mJ | Note 2 |
| Avalanche current | IAR | 3 | A | Note 1 |
| Repetitive Avalanche energy | EAR | 1.6 | mJ | tAR limited by Tjmax, Note 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55...+150 | C | |
| Thermal Resistance, Junction-to-Case (Maximum) | RthJC | 0.95 | C /W | |
| Thermal Resistance, Junction-to-Ambient (Maximum) | RthJA | 62 | C /W | |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=650V,VGS=0V, Tc=25C |
| Zero Gate Voltage Drain Current | IDSS | 100 | A | VDS=650V,VGS=0V, Tc=125C |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V,VDS=0V |
| Input Capacitance | Clss | 1210 - 1400 | pF | VDS=50V,VGS=0V, F=1.0MHz |
| Output Capacitance | Coss | 74 | pF | |
| Reverse Transfer Capacitance | Crss | 0.2 | pF | |
| Total Gate Charge | Qg | 24.7 - 42 | nC | VDS=480V,ID=15A, VGS=10V |
| Gate-Source Charge | Qgs | 8.2 | nC | |
| Gate-Drain Charge | Qg d | 8.5 | nC | |
| Turn-on Delay Time | td(on) | 14 | nS | VDD=380V,ID=8A, RG=2.3,VGS=10V |
| Turn-on Rise Time | tr | 8 | nS | |
| Turn-Off Delay Time | td(off) | 55 | nS | |
| Turn-Off Fall Time | tf | 7 | nS | |
| Source-drain current (Body Diode) | ISD | 15 | A | TC=25C |
| Pulsed Source-drain current (Body Diode) | ISDM | 60 | A | |
| Forward On Voltage | VSD | 0.9 - 1.2 | V | Tj=25C,ISD=15A,VGS=0V |
| Reverse Recovery Time | trr | 240 | nS | Tj=25C,IF=7.5A,di/dt=100A/s |
| Reverse Recovery Charge | Qrr | 2 | uC | |
| Peak Reverse Recovery Current | Irrm | 17 | A |
2508041620_Huixin-H15N65D_C49823480.pdf
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