SiC Power MOSFET with low capacitance and fast switching characteristics HXY MOSFET NTH4L027N65S3F HXY
Key Attributes
Model Number:
NTH4L027N65S3F-HXY
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
97A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
33pF
Input Capacitance(Ciss):
3.28nF
Output Capacitance(Coss):
359pF
Pd - Power Dissipation:
429W
Gate Charge(Qg):
172nC
Mfr. Part #:
NTH4L027N65S3F-HXY
Package:
TO-247-4L
Product Description
Product Overview
The NTH4L027N65S3F is a 3rd generation SiC Power MOSFET from HUAXUANYANG ELECTRONICS, featuring an N-Channel Enhancement Mode design. It is optimized with a separate driver source pin for improved performance, offering high blocking voltage with low on-resistance, and high-speed switching with low capacitances. The MOSFET has a fast intrinsic diode with low reverse recovery characteristics, making it suitable for applications requiring high efficiency and reduced cooling requirements. It is halogen-free and RoHS compliant.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Model: NTH4L027N65S3F
- Technology: SiC Power MOSFET, N-Channel Enhancement Mode
- Certifications: Halogen free, RoHS compliant
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID =250uA | 650 | V |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=15mA | 3 | V |
| Drain-source on-state resistance | RDS(on) | VGS=20V, ID=33.5A, Tj=25C | 34 | m |
| Zero gate voltage drain current | IDSS | VDS=650V,VGS=0V | 1 | A |
| Gate-source leakage current | IGSS | VGS=20V | 10 | nA |
| Continuous drain current | ID | TC = 25C | 241 | A |
| Continuous drain current | ID | TC = 100C | 162 | A |
| Pulsed drain current | ID pulse | (TC = 25C, tp limited by Tjmax) | 429 | A |
| Power dissipation | Ptot | (TC = 25C) | 300 | W |
| Gate-Source voltage | VGS | -5/+20 | V | |
| Operating junction and storage temperature | Tj , Tstg | -55...+175 | C | |
| Avalanche energy, single pulse | EAS | (L=10mH) | 1620 | mJ |
| Input Capacitance | Ciss | VDS = 400V VGS = -5/20V ID = 33.5A VAC = 25mV f = 1MHz | 359 | pF |
| Output Capacitance | Coss | VDS = 400V VGS = -5/20V ID = 33.5A VAC = 25mV f = 1MHz | 44 | pF |
| Reverse Transfer Capacitance | Crss | VDS = 400V VGS = -5/20V ID = 33.5A VAC = 25mV f = 1MHz | 84 | pF |
| Gate Total Charge | QG | VGS=20V, ID=33.5A, Tj=25C | 115 | nC |
| Turn-on delay time | td(on) | VDD = 400V VGS = -5/+20V RG = 10 L = 100uH | 32 | ns |
| Turn-off delay time | td(off) | VDD = 400V VGS = -5/+20V RG = 10 L = 100uH | 41 | ns |
| Rise time | tr | VGS=18V, ID =33.5A, RG = 10 | 25 | ns |
| Fall time | tf | VGS=18V, ID =33.5A, RG = 10 | 22 | ns |
| Turn-On Switching Energy | EON | VDS = 400V VGS = -5/20V ID = 33.5A | 156 | J |
| Turn-Off Switching Energy | EOFF | VDS = 400V VGS = -5/20V ID = 33.5A | 40 | J |
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=8.8A, TJ=25C | 2.6 | V |
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=8.8A, TJ=175C | 1.1 | V |
| Continuous Diode Forward Current | IS | VGS = 4V,TC =25C | 83 | A |
| Body Diode Reverse Recovery Charge | Qrr | VR = 400V, ID = 17.6A di/dt = 1000A/S | 3280 | nC |
| Body Diode Reverse Recovery Time | trr | VR = 400V, ID = 17.6A di/dt = 1000A/S | 33 | ns |
2509181733_HXY-MOSFET-NTH4L027N65S3F-HXY_C48972072.pdf
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