Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge for Power Conversion
Key Attributes
Model Number:
IGW50N65F5
Product Custom Attributes
Td(off):
175ns
Pd - Power Dissipation:
305W
Td(on):
21ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
3nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.5mA
Gate Charge(Qg):
120nC@15V
Operating Temperature:
-40℃~+175℃
Switching Energy(Eoff):
160uJ
Turn-On Energy (Eon):
490uJ
Mfr. Part #:
IGW50N65F5
Package:
TO-247-3
Product Description
Product Overview
The IGW50N65F5 is a high-speed 650V IGBT from Infineon's TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, with low gate charge (QG) and a maximum junction temperature of 175C. This IGBT is an ideal fit for boost converters when paired with SIC Schottky Diodes and is qualified according to JEDEC standards for industrial applications. It is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Certifications: RoHS compliant, JEDEC qualified
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Package |
|---|---|---|---|---|---|
| IGW50N65F5 | 650V | 80.0A | 1.6V | 175C | PG-TO247-3 |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCE | 650 | V |
| DC collector current, limited by Tvjmax (TC = 25C) | IC | 80.0 | A |
| DC collector current, limited by bondwire (TC = 100C) | IC | 56.0 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 150.0 | A |
| Turn off safe operating area | - | -150.0 | A |
| Gate-emitter voltage | VGE | 20 | V |
| Transient Gate-emitter voltage | VGE | 30 | V |
| Power dissipation (TC = 25C) | Ptot | 305.0 | W |
| Power dissipation (TC = 100C) | Ptot | 152.5 | W |
| Operating junction temperature | Tvj | -40...+175 | C |
| Storage temperature | Tstg | -55...+150 | C |
| Soldering temperature | - | 260 | C |
| Mounting torque, M3 screw | M | 0.6 | Nm |
Thermal Resistance
| Parameter | Symbol | Conditions | Max. Value | Unit |
|---|---|---|---|---|
| IGBT thermal resistance, junction - case | Rth(j-c) | - | 0.50 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 40 | K/W |
Electrical Characteristics (at Tvj = 25C, unless otherwise specified)
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A | - | 1.60 | 2.10 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A, Tvj = 125C | - | 1.80 | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A, Tvj = 175C | - | 1.90 | - | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.50mA, VCE = VGE | 3.2 | 4.0 | 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - | - | 40.0 | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 175C | - | - | 2000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 50.0A | - | 62.0 | - | S |
Dynamic Characteristic
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 3000 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 50 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 11 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 50.0A, VGE = 15V | - | 120.0 | - | nC |
| Internal emitter inductance | LE | measured 5mm from case | - | 13.0 | - | nH |
Switching Characteristic, Inductive Load (Tvj = 25C)
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| Turn-on delay time | td(on) | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 21 | - | ns |
| Rise time | tr | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 15 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 175 | - | ns |
| Fall time | tf | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 18 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.49 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.16 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.65 | - | mJ |
| Turn-on delay time | td(on) | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 19 | - | ns |
| Rise time | tr | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 4 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 195 | - | ns |
| Fall time | tf | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 10 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.11 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.04 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.15 | - | mJ |
Switching Characteristic, Inductive Load (Tvj = 150C)
| Parameter | Symbol | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| Turn-on delay time | td(on) | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 20 | - | ns |
| Rise time | tr | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 15 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 202 | - | ns |
| Fall time | tf | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 3 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.68 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.21 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.89 | - | mJ |
| Turn-on delay time | td(on) | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 18 | - | ns |
| Rise time | tr | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 5 | - | ns |
| Turn-off delay time | td(off) | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 245 | - | ns |
| Fall time | tf | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 12 | - | ns |
| Turn-on energy | Eon | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.18 | - | mJ |
| Turn-off energy | Eoff | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.06 | - | mJ |
| Total switching energy | Ets | VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0 | - | 0.24 | - | mJ |
Applications
- Solar converters
- Uninterruptible power supplies
- Welding converters
- Mid to high range switching frequency converters
Package Pin Definition
- Pin 1 - gate
- Pin 2 & backside - collector
- Pin 3 - emitter
2410121744_Infineon-IGW50N65F5_C536107.pdf
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