Low Gate Voltage N Channel HXY MOSFET HXY2102EI Featuring Trench Technology and Switching Performance
Key Attributes
Model Number:
HXY2102EI
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@2.5V,0.3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Pd - Power Dissipation:
300mW
Input Capacitance(Ciss):
300pF@10V
Mfr. Part #:
HXY2102EI
Package:
SOT-323
Product Description
Product Overview
The HXY2102EI is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Product ID: HXY2102EI
- Website: www.hxymos.com
- Package: SOT-323
- Marking: TS2
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 2 | A | |||
| Maximum Power Dissipation | PD | 0.3 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 125 | /W | |||
| STATIC CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =18V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage (note2) | VGS(th) | VDS =VGS, ID =250µA | 0.4 | 0.7 | 1.0 | V |
| Drain-source on-resistance (note2) | RDS(on) | VGS =4.5V, ID =2.0A | 55 | mΩ | ||
| Drain-source on-resistance (note2) | RDS(on) | VGS =2.5V, ID =0.3A | 85 | mΩ | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 1.0 | A | |||
| Diode forward voltage | VSD | IS=1.0A, VGS =0V | 1.2 | V | ||
| DYNAMIC CHARACTERISTICS (note3) | ||||||
| Input capacitance | Ciss | VDS =10V,VGS =0V, f =1MHz | 300 | pF | ||
| Output capacitance | Coss | VDS =10V,VGS =0V, f =1MHz | 120 | pF | ||
| Reverse transfer capacitance | Crss | VDS =10V,VGS =0V, f =1MHz | 80 | pF | ||
| SWITCHING CHARACTERISTICS (note3) | ||||||
| Turn-on delay time | td(on) | VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω | 15 | nS | ||
| Turn-on rise time | tr | VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω | 85 | nS | ||
| Turn-off delay time | td(off) | VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω | 65 | nS | ||
| Turn-off fall time | tf | VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω | 27 | nS | ||
2509181602_HXY-MOSFET-HXY2102EI_C5148642.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
