HXY MOSFET CSD17577Q3A HXY N Channel MOSFET with 30V Drain Source Voltage and 60A continuous current
Key Attributes
Model Number:
CSD17577Q3A-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
31.6nC@4.5V
Mfr. Part #:
CSD17577Q3A-HXY
Package:
DFN-8(3x3)
Product Description
Product Overview
The CSD17577Q3A is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)
- Origin: China
- Material: N-Channel MOSFET
- Package: DFN3X3-8L
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 60 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 42 | A | |||
| IDM | Pulsed Drain Current2 | 192 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 144.7 | mJ | |||
| IAS | Avalanche Current | 53.8 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 62.5 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 4.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient1 | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 2.4 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.0213 | V/ | ||
| RDS(ON) | Static Drain-Source On- Resistance2 | VGS=10V , ID=30A | 4 | 5.5 | Ω | |
| RDS(ON) | Static Drain-Source On- Resistance2 | VGS=4.5V , ID=15A | 5.2 | 6 | Ω | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | |
| ΔVGS(th) | VGS(th) Temperature Coefficient | -5.8 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | DS=5V , ID=30A | 26.5 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.4 | Ω | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=15A | 31.6 | nC | ||
| Qgs | Gate-Source Charge | 8.6 | ||||
| Qgd | Gate-Drain Charge | 11.7 | ||||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=15A | 9 | ns | ||
| Tr | Rise Time | 19 | ||||
| Td(off) | Turn-Off Delay Time | 58 | ||||
| Tf | Fall Time | 15.2 | ||||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 3075 | pF | ||
| Coss | Output Capacitance | 400 | ||||
| Crss | Reverse Transfer Capacitance | 315 | ||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | 60 | A | ||
| ISM | Pulsed Source Current2,6 | 192 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1 | V |
2509181724_HXY-MOSFET-CSD17577Q3A-HXY_C22367294.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
