HXY MOSFET FDS89161LZ HXY Dual N Channel Enhancement Mode MOSFET with High Drain Current Capability
Key Attributes
Model Number:
FDS89161LZ-HXY
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37.4pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.535nF@15V
Gate Charge(Qg):
19.5nC@10V
Mfr. Part #:
FDS89161LZ-HXY
Package:
SOP-8
Product Description
Product Description
The FDS89161LZ is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | +20 | V | |||
| ID@TA=25 | Drain Current, VGS @ 4.5V | 8 | A | |||
| ID@TA=70 | Drain Current, VGS @ 4.5V | 5 | A | |||
| IDM | Pulsed Drain Current | 15 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Rthj-a | Maximum Thermal Resistance, Junction- ambient | 85 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=2A | 0.098 | 0.112 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=1A | 0.104 | 0.110 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=2A | 12 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 4 | |||
| Qg | Total Gate Charge (10V) | VDS=60V , VGS=10V , ID=2A | 19.5 | nC | ||
| Qgs | Gate-Source Charge | 3.2 | 3.6 | nC | ||
| Qgd | Gate-Drain Charge | 3 | 4 | nC | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3 ID=1A | 16.2 | ns | ||
| Tr | Rise Time | 60 | ns | |||
| Td(off) | Turn-Off Delay Time | 37.4 | ns | |||
| Tf | Fall Time | 1535 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | pF | |||
| Coss | Output Capacitance | pF | ||||
| Crss | Reverse Transfer Capacitance | pF | ||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 8 | A | ||
| ISM | Pulsed Source Current | 12 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 0.98 | 1.2 | V |
2509181716_HXY-MOSFET-FDS89161LZ-HXY_C22366785.pdf
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