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quality Industrial Grade EasyDUAL Module Infineon FF55MR12W1M1HB11BPSA1 with Low Inductive Design and Clamps factory
quality Industrial Grade EasyDUAL Module Infineon FF55MR12W1M1HB11BPSA1 with Low Inductive Design and Clamps factory

Industrial Grade EasyDUAL Module Infineon FF55MR12W1M1HB11BPSA1 with Low Inductive Design and Clamps

Key Attributes
Model Number: FF55MR12W1M1HB11BPSA1
Product Custom Attributes
Mfr. Part #:
FF55MR12W1M1HB11BPSA1
Product Description

Product Overview

The EasyDUAL module, featuring CoolSiC Trench MOSFET technology and PressFIT/NTC, is designed for high-frequency switching applications. Its low inductive design and efficient performance make it suitable for DC/DC converters, motor drives, and UPS systems. Qualified for industrial applications according to IEC standards, this module offers rugged mounting with integrated clamps and an integrated NTC temperature sensor for reliable operation.

Product Attributes

  • Brand: Infineon
  • Technology: CoolSiC Trench MOSFET
  • Mounting: PressFIT / Integrated mounting clamps
  • Certifications: Qualified for industrial applications according to IEC 60747, 60749, and 60068

Technical Specifications

Parameter Symbol Note or test condition Values Unit
Electrical Features
Drain-source voltage VDSS Tvj = 25 C 1200 V
Continuous DC drain current IDDC Tvj = 175 C, VGS = 18 V, TH = 105 C 15 A
Repetitive peak drain current IDRM verified by design, tp limited by Tvjmax 30 A
Drain-source on-resistance RDS(on) ID = 15 A, VGS = 18 V, Tvj = 25 C 52.9 m
Gate threshold voltage VGS(th) ID = 6 mA, VDS = VGS, Tvj = 25 C 3.45 - 5.15 V
Input capacitance CISS f = 100 kHz, VDS = 800 V, VGS = 0 V, Tvj = 25 C 1.35 nF
Turn-on energy loss per pulse Eon ID = 15 A, VDD = 600 V, L = 6 nH, VGS = -3/18 V, RGon = 3.9 , di/dt = 1.8 kA/s (Tvj = 175 C), Tvj = 25 C 0.235 mJ
Turn-off energy loss per pulse Eoff ID = 15 A, VDD = 600 V, L = 6 nH, VGS = -3/18 V, RGoff = 3.3 , dv/dt = 27.7 kV/s (Tvj = 175 C), Tvj = 25 C 0.037 mJ
Thermal resistance, junction to heat sink RthJH per MOSFET, grease = 1 W/(mK) 2.03 K/W
Temperature under switching conditions Tvj op -40 - 175 C
Body Diode Features
DC body diode forward current ISD Tvj = 175 C, VGS = -3 V, TH = 105 C 5 A
Forward voltage VSD ISD = 15 A, VGS = -3 V, Tvj = 25 C 4.2 - 5.35 V
NTC-Thermistor Features
Rated resistance R25 TNTC = 25 C 5 k
B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K
Mechanical Features
Stray inductance module LsCE 14 nH
Module lead resistance, terminals - chip RCC'+EE' TH = 25 C, per switch 5.3 m
Mounting force per clamp F 20 - 50 N
Weight G 24 g

2410301840_Infineon-FF55MR12W1M1HB11BPSA1_C20190934.pdf

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