HXY MOSFET IPG20N06S4L 26 HXY Dual N Channel MOSFET with excellent avalanche ruggedness and low RDS
Key Attributes
Model Number:
IPG20N06S4L-26-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
2 N-Channel
Pd - Power Dissipation:
60W
Mfr. Part #:
IPG20N06S4L-26-HXY
Package:
DFN-8(5x6)
Product Description
Product Overview
The IPG20N06S4L-26 is a Dual N-Channel MOSFET utilizing advanced SGT MOSFET technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, specifically designed for enhanced ruggedness. This device is suitable for applications in consumer electronic power supplies, motor control, and synchronous-rectification circuits.
Product Attributes
- Brand: HXY (HUAXUANYANG ELECTRONICS CO.,LTD)
- Origin: Shenzhen, China
- Product ID: IPG20N06S4L-26
- Package: DFN5X6B-8L
- Brand: HXY
- Pack: DFN5X6B-8L
- Qty(PCS): 5000
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | TC=25 | 60 | V | ||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC = 25 | 35 | A | ||
| ID | Continuous Drain Current | TC = 100 | 26 | A | ||
| IDM | Pulsed Drain Current | note1 | 180 | A | ||
| EAS | Single Pulsed Avalanche Energy | note2 | 36 | mJ | ||
| PD | Power Dissipation | TC = 25 | 60 | W | ||
| RJC | Thermal Resistance, Junction to Case | 2.5 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +175 | |||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=20A, note3 | - | 11 | 14 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=10A, note3 | - | 14 | 20 | m |
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 930 | - | pF |
| Coss | Output Capacitance | - | 230 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 8 | - | pF | |
| Qg | Total Gate Charge | VDS=30V, ID=20A, VGS=10V | - | 22 | - | nC |
| Qgs | Gate-Source Charge | - | 4.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 3.5 | - | nC | |
| td(on) | Turn-on Delay Time | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 4.5 | - | ns |
| tr | Turn-on Rise Time | - | 2.7 | - | ns | |
| td(off) | Turn-off Delay Time | - | 13.8 | - | ns | |
| tf | Turn-off Fall Time | - | 2.7 | - | ns | |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 45 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 180 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=30A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | TJ=25, IF=20A,dI/dt=100A/s | - | 18 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 12 | - | nC |
2509181707_HXY-MOSFET-IPG20N06S4L-26-HXY_C20606274.pdf
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