N Channel SiC Power MOSFET HXY MOSFET SCT3022ALHRC11-HXY with TO 247 Package and High Voltage Rating
Key Attributes
Model Number:
SCT3022ALHRC11-HXY
Product Custom Attributes
Mfr. Part #:
SCT3022ALHRC11-HXY
Package:
TO-247
Product Description
SiC Power MOSFET N-Channel Enhancement Mode
The HUAXUANYANG HXY SiC Power MOSFET is a high-performance N-channel enhancement mode device utilizing Wide Bandgap SiC MOSFET technology. It offers reduced switching losses, increased system switching frequency, and higher power density, leading to reduced heat sink requirements. Ideal for demanding applications such as switch mode power supplies, renewable energy systems, on-board chargers, and high voltage DC/DC converters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: SCT3022ALHRC11
- Package: TO-247
- Certifications: Halogen free, RoHS compliant
- Material: Silicon Carbide (SiC)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Symbol | Parameter | Test conditions | Value | Unit | Note |
| Maximum Ratings | |||||
| VDSmax | Drain-Source Voltage | VGS = 0V, ID = 100A | 650 | V | |
| VGSmax | Gate-Source voltage | AC (f > 1 Hz) | -10/+25 | V | |
| VGSop | Recommend Gate-Source Voltage | Static | -4/+15 | V | |
| ID | Continuous Drain current | VGS = 18V, TC = 25C | 108 | A | Fig. 14 |
| ID | Continuous Drain current | VGS = 18V, TC = 100C | 76 | A | |
| ID,pulse | Pulsed Drain Current | VGS = 18V, tp limited by Tjmax | 193 | A | Fig.16 |
| PD | Power Dissipation | TC = 25C, Tj = 175C | 341 | W | |
| Tj | Operating junction temperature | -55~175 | C | ||
| Tstg | Storage temperature | -55~175 | C | ||
| Mounting torque | TO-247 mounting torque | M3 Screw | 0.7 | Nm | |
| Static Characteristics | |||||
| V(BR)DSS | Drain-Source Breakdown voltage | VGS = 0V, ID = 100A | 650 | V | |
| VGS(th) | Gate Threshold voltage | VGS = VDS, ID =20mA | 2.6 | V | Fig. 9 |
| VGS(th) | Gate Threshold voltage | VGS = VDS, ID =20mA, Tj=175C | 1.8 | V | |
| IGSS | Gate-Source Leakage current | VGS =18V , VDS = 0V | 250 | nA | |
| IDSS | Drain Current Zero Gate Voltage | VDS =650V, VGS = 0V, Tj = 25C | 1 - 50 | A | |
| RDS(on) | Drain-Source On-state Resistance | VGS = 15V, ID =40A | 24 | m | Fig. 3, 4 , 5 |
| RDS(on) | Drain-Source On-state Resistance | VGS = 15V, ID =40A,Tj = 175C | 30 | m | |
| gfs | Transconductance | VDS = 15V, ID =40A | 25 | S | Fig. 6 |
| gfs | Transconductance | VDS = 15V, ID =40A,Tj = 175C | 25 | S | |
| Thermal Characteristics | |||||
| Rth(jc) | Thermal resistance from Junction to Case | 0.44 | K/W | Fig. 15 | |
| Rth(ja) | Thermal resistance from Junction to Ambient | 40 | K/W | ||
| Gate Charge Characteristics | |||||
| QGS | Gate to Source Charge | VDS = 400V ID =40A VGS = -4V/18V | 35 | nC | Fig. 10 |
| QGD | Gate to Drain Charge | 17 | nC | ||
| QG | Total Gate Charge | 142 | nC | ||
| AC Characteristics | |||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 600V f =1 MHz VAC = 25mV | 2935 | pF | Fig. 13 |
| Coss | Output Capacitance | f=1 MHz, VAC = 25mV | 221 | pF | |
| Crss | Reverse Transfer Capacitance | f=1 MHz, VAC = 25mV | 16.6 | pF | |
| RG(int) | Internal Gate Resistance | 1.2 | |||
| Switching Characteristics | |||||
| td(on) | Turn-On Delay Time | VDS = 400V, VGS = -4/+18V ID= 40 A, RG(iext) = 5 L = 200H | 3 | nS | Fig.21 |
| tr | Rise Time | 29 | nS | ||
| td(off) | Turn-Off Delay Time | 32 | nS | ||
| tf | Fall Time | 9 | nS | ||
| Eon | Turn-On Energy | 181 | J | Fig.19 | |
| Eoff | Turn-Off Energy | 151 | J | ||
| Etot | Total switching energy | 332 | J | ||
| Reverse Diode Characteristics | |||||
| VSD | Diode Forward Voltage | VGS = -4V, ISD = 20A | 3.7 | V | Fig. 7,8 |
| VSD | Diode Forward Voltage | VGS = -4V, ISD = 20A, Tj = 175C | 3.2 | V | |
| IS | Continuous Diode Forward Current | VGS = -4V, TC = 25C | 81 | A | |
| IS, pulse | Diode pulse Current | VGS = -4V, pulse width tp limited by Tjmax | 193 | A | |
| trr | Reverse Recovery Time | VGS = -4V, ISD = 40 A , VR = 400V dif/dt = 2200A/us | 19 | nS | |
| Qrr | Reverse Recovery Charge | 238 | nC | ||
| Irrm | Peak Reverse Recovery Current | 17 | A | ||
2512091725_HXY-MOSFET-SCT3022ALHRC11-HXY_C53134002.pdf
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