Durable P Channel HXY MOSFET HXY70P03D Featuring Low Gate Charge and Battery Protection Applications
Key Attributes
Model Number:
HXY70P03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
10mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 P-Channel
Pd - Power Dissipation:
90W
Input Capacitance(Ciss):
3.45nF@25V
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HXY70P03D
Package:
TO-252-2L
Product Description
Product Overview
The HXY70P03D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation down to 4.5V gate voltages. This device is ideal for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Product ID: HXY70P03D
- Package: TO-252-2L
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS (Drain-Source Voltage) | -30 | V | |||
| VGS (Gate-Source Voltage) | ±20 | V | |||
| ID@TC=25°C (Continuous Drain Current) | VGS @ -10V | -70 | A | ||
| ID@TC=100°C (Continuous Drain Current) | VGS @ -10V | -50 | A | ||
| IDM (Pulsed Drain Current) | -200 | A | |||
| EAS (Single Pulse Avalanche Energy) | 80 | mJ | |||
| IAS (Avalanche Current) | 40 | A | |||
| PD@TC=25°C (Total Power Dissipation) | 90 | W | |||
| TSTG (Storage Temperature Range) | -55 | 175 | °C | ||
| TJ (Operating Junction Temperature Range) | -55 | 175 | °C | ||
| RθJA (Thermal Resistance Junction-ambient) | (t≤10S) | 20 | °C /W | ||
| RθJA (Thermal Resistance Junction-ambient) | (Steady State) | 50 | °C /W | ||
| RθJC (Thermal Resistance Junction-case) | 1.6 | °C /W | |||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID =-250uA | 30 | V | ||
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=-10V , ID =-20A | 7 | 10 | Ω | |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=-4.5V , ID =-15A | 11 | 18 | Ω | |
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =-250uA | 1.2 | -2.5 | V | |
| IDSS (Drain-Source Leakage Current) | VDS=-24V , VGS=0V , TJ =25°C | -1 | uA | ||
| IDSS (Drain-Source Leakage Current) | VDS=-24V , VGS=0V , TJ =55°C | -5 | uA | ||
| IGSS (Gate-Source Leakage Current) | VGS=±20V , VDS=0V | ±100 | nA | ||
| Rg (Gate Resistance) | VDS=0V , VGS=0V , f=1MHz | 1.2 | Ω | ||
| Qg (Total Gate Charge) | VDS=-15V , VGS=-10V ID=-18A | 60 | nC | ||
| Qgs (Gate-Source Charge) | 9 | ||||
| Qgd (Gate-Drain Charge) | 15 | ||||
| Td(on) (Turn-On Delay Time) | VDD=-15V VGS=-10V RG=3.3Ω, ID=-20A | 17 | ns | ||
| Tr (Rise Time) | 40 | ns | |||
| Td(off) (Turn-Off Delay Time) | 55 | ns | |||
| Tf (Fall Time) | 13 | ns | |||
| Ciss (Input Capacitance) | VDS=-25V , VGS=0V , f=1MHz | 3450 | pF | ||
| Coss (Output Capacitance) | 255 | pF | |||
| Crss (Reverse Transfer Capacitance) | 140 | pF | |||
| IS (Continuous Source Current) | VG=VD=0V , Force Current | -70 | A | ||
| VSD (Diode Forward Voltage) | VGS=0V , IS=-1A , TJ =25°C | -1.2 | V | ||
| trr (Reverse Recovery Time) | IF=-20A , di/dt=100A/µs , TJ =25°C | 22 | nS | ||
| Qrr (Reverse Recovery Charge) | 72 | nC |
2509181544_HXY-MOSFET-HXY70P03D_C3033440.pdf
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