HXY MOSFET IPT015N10N5 HXY N Channel MOSFET designed for enhanced ruggedness and power distribution
Key Attributes
Model Number:
IPT015N10N5-HXY
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
312A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
2.12nF
Input Capacitance(Ciss):
14.3nF
Pd - Power Dissipation:
390.6W
Gate Charge(Qg):
250nC@10V
Mfr. Part #:
IPT015N10N5-HXY
Package:
TOLL
Product Description
Product Overview
The IPT015N10N5 is an N-Channel MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced SGT MOSFET technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, designed for enhanced ruggedness. This device is suitable for applications such as battery protection and power distribution.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Product ID: IPT015N10N5
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: N-SGT Enhancement Mode MOSFET
- Package Marking: IPT015N10N5
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 312 | A | ||
| Continuous Drain Current | ID | TC=100°C | 200 | A | ||
| Pulsed Drain Current | IDM | 1248 | A | |||
| Single Pulse Avalanche Energy | EAS | 1250 | mJ | |||
| Total Power Dissipation | PD | TC=25°C | 390.6 | W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Thermal Resistance from Junction-to-Ambient | RθJA | 39 | °C/W | |||
| Thermal Resistance from Junction-to-Case | RθJC | 0.32 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | - | - | V |
| Gate-body Leakage current | lGSS | VDS = 0V, VGS = ±20V | - | ±100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V, TJ=25°C | - | 1 | µA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V, TJ=100°C | - | 100 | µA | |
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2 | 3 | 4 | V |
| Drain-Source on-Resistance | RDS(on) | VGS = 10V, ID = 20A | 1.4 | 2.0 | mΩ | |
| Forward Transconductance | gfs | VDS = 10V, ID =20A | 84 | - | S | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 50V, VGS =0V, f =1MHz | 14300 | - | pF | |
| Output Capacitance | Coss | VDS = 50V, VGS =0V, f =1MHz | 2120 | - | pF | |
| Reverse Transfer Capacitance | Crss | VDS = 50V, VGS =0V, f =1MHz | 50 | - | pF | |
| Gate Resistance | Rg | f=1MHz | 2.8 | - | Ω | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VGS = 10V, VDS = 50V, ID= 20A | 250 | - | nC | |
| Gate-Source Charge | Qgs | VGS = 10V, VDS = 50V, ID= 20A | 53 | - | ||
| Gate-Drain Charge | Qg | VGS = 10V, VDS = 50V, ID= 20A | 77 | - | ||
| Turn-on Delay Time | td(on) | VGS =10V, VDD = 50V, RG = 3Ω, ID= 20A | 41 | - | ns | |
| Rise Time | tr | VGS =10V, VDD = 50V, RG = 3Ω, ID= 20A | 88 | - | ns | |
| Turn-off Delay Time | td(off) | VGS =10V, VDD = 50V, RG = 3Ω, ID= 20A | 163 | - | ns | |
| Fall Time | tf | VGS =10V, VDD = 50V, RG = 3Ω, ID= 20A | 98 | - | ns | |
| Body Diode Characteristics | ||||||
| Body Diode Reverse Recovery Time | trr | IF=20A, di/dt = 100A/µs | 106 | - | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, di/dt = 100A/µs | 245 | - | nC | |
| Diode Forward Voltage | VSD | IS = 20A, VGS = 0V | - | 1.2 | V | |
| Continuous Source Current | IS | TC=25°C | - | 312 | A | |
2509281751_HXY-MOSFET-IPT015N10N5-HXY_C22366979.pdf
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