High Collector Emitter Voltage ISC 2SC4552 Silicon NPN Power Transistor for Driver Circuit Solutions
Key Attributes
Model Number:
2SC4552
Product Custom Attributes
Mfr. Part #:
2SC4552
Package:
TO-220F
Product Description
ISC Silicon NPN Power Transistor 2SC4552
The 2SC4552 is an NPN power transistor designed for driver applications in DC/DC converters and actuators. It features a high collector-emitter sustaining voltage of 60V (Min), high DC current gain (hFE=100 Min @ VCE=2V, IC=3A), and low saturation voltage (VCE(sat)=0.3V Max @ IC=8A, IB=0.4A). Its robust device performance and reliable operation are ensured by minimum lot-to-lot variations.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
- Type: NPN Power Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC=50mA, Ib=0 | 60 | V | ||
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 8A; IB= 0.4A | 0.3 | V | ||
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 12A; IB= 0.6A | 0.5 | V | ||
| VBE(sat)-1 | Base-Emitter Saturation Voltage | IC= 8A; IB= 0.4A | 1.2 | V | ||
| VBE(sat)-2 | Base-Emitter Saturation Voltage | IC= 12A; IB= 0.6A | 1.5 | V | ||
| ICBO | Collector Cutoff Current | VCB= 60V; IE= 0 | 10 | A | ||
| ICEO | Collector Cutoff Current | VCE= 60V; Ib=0 | 1.0 | mA | ||
| IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | 10 | A | ||
| hFE-1 | DC Current Gain | IC= 1.5A; VCE= 2V | 100 | |||
| hFE-2 | DC Current Gain | IC= 3A; VCE= 2V | 100 | 400 | ||
| hFE-3 | DC Current Gain | IC= 8A; VCE= 2V | 60 | |||
| hFE-2 Classifications | M: 100-200 L: 150-300 K: 200-400 | |||||
| VCBO | Collector-Base Voltage | 100 | V | |||
| VCEO | Collector-Emitter Voltage | 60 | V | |||
| VEBO | Emitter-Base Voltage | 7.0 | V | |||
| IC | Collector Current-Continuous | 15 | A | |||
| ICM | Collector Current-Pulse | 30 | A | |||
| IB | Base Current-Continuous | 7.5 | A | |||
| PT | Total Power Dissipation @TC=25 | 30 | W | |||
| PT | Total Power Dissipation @Ta=25 | 2.0 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 |
2411220246_ISC-2SC4552_C491426.pdf
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