Silicon NPN Power Transistor ISC BU406 with High Voltage Capability and Peak Collector Current of 10A
Key Attributes
Model Number:
BU406
Product Custom Attributes
Mfr. Part #:
BU406
Package:
TO-220C
Product Description
Product Overview
The INCHANGE Semiconductor BU406 is a silicon NPN power transistor designed for high-voltage applications. It features a high collector-emitter voltage (VCEV= 400V Min), fast switching speed (tf= 750ns Max), and low saturation voltage (VCE(sat)= 1.0V Max @ IC= 5A). This transistor is specifically designed for use in horizontal deflection output stages of TVs and CRTs.
Product Attributes
- Brand: INCHANGE Semiconductor
- Product Type: Silicon NPN Power Transistor
- Model: BU406
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| VCBO | Collector-Base Voltage | 400 | V | |||
| VCEV | Collector-Emitter Voltage | 400 | V | |||
| VCEO | Collector-Emitter Voltage | 200 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current-Continuous | 7 | A | |||
| ICP | Collector Current-Peak Repetitive | 10 | A | |||
| ICP | Collector Current- Peak (10ms) | 15 | A | |||
| IB | Base Current | 4 | A | |||
| PC | Collector Power Dissipation | @ TC=25 | 60 | W | ||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -65 | 150 | |||
| Rth j-c | Thermal Resistance, Junction to Case | 2.08 | /W | |||
| Rth j-a | Thermal Resistance, Junction to Ambient | 70 | /W | |||
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 100mA ;IB= 0 | 200 | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5A; IB= 0.5A | 1.0 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 5A; IB= 0.5A | 1.2 | V | ||
| ICES | Collector Cutoff Current | VCE= 400V; VBE= 0 | 5.0 | mA | ||
| ICES | Collector Cutoff Current | VCE=250V; VBE= 0 | 0.1 | mA | ||
| ICES | Collector Cutoff Current | VCE=250V; VBE= 0;TC= 150 | 1.0 | mA | ||
| IEBO | Emitter Cutoff Current | VEB= 6V; IC=0 | 1.0 | mA | ||
| fT | Current-GainBandwidth Product | IC= 0.5A ; VCE= 10V, ftest= 20MHz | 10 | MHz | ||
| COB | Output Capacitance | IE= 0; VCB= 10V; ftest= 1.0MHz | 80 | pF | ||
| tf | Fall Time | IC= 5A; IB1= -IB2= 0.5A, L= 150H VCC= 40V | 0.75 | s |
2411220250_ISC-BU406_C491413.pdf
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