Silicon NPN Darlington Power Transistor ISC BD677 with 60V Collector Emitter Breakdown Voltage and Performance

Key Attributes
Model Number: BD677
Product Custom Attributes
Mfr. Part #:
BD677
Package:
TO-126
Product Description

Product Overview

The ISC BD677 is a Silicon NPN Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a collector-emitter breakdown voltage of 60V and a minimum DC current gain (hFE) of 750 at 1.5A, making it suitable for robust device performance and reliable operation. It is a complement to the BD678 type.

Product Attributes

  • Brand: ISC
  • Type: Silicon NPN Darlington Power Transistor
  • Registered Trademark: ISC, ISCsemi
  • Origin: Not specified
  • Material: Silicon
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

SymbolParameterConditionsMinMaxUnit
V(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA; IB= 060V
VCE(sat)Collector-Emitter Saturation VoltageIC= 1.5A; IB= 30mA2.5V
VBE(on)Base-Emitter On VoltageIC= 1.5A; VCE= 3V2.5V
ICEOCollector Cutoff CurrentVCE= 60V; IB= 00.5mA
ICBOCollector Cutoff CurrentVCB= 60V; IE= 00.2mA
ICBOCollector Cutoff CurrentVCB= 60V; IE= 0;TC= 1002.0mA
IEBOEmitter Cutoff CurrentVEB= 5V; IC= 02.0mA
hFEDC Current GainIC= 50mA ; VCE= 3V750
hFEDC Current GainIC= 1.5 A ; VCE= 3V750
hFEDC Current GainIC= 4 A ; VCE= 3V1000
VCBOCollector-Base Voltage60V
VCEOCollector-Emitter Voltage60V
VEBOEmitter-Base Voltage5V
ICCollector Current-Continuous4A
IBBase Current0.1A
PCCollector Power DissipationTC=2540W
TjJunction Temperature150
TstgStorage Temperature Range-55150
Rth j-cThermal Resistance, Junction to Case3.13/W

2410122028_ISC-BD677_C491406.pdf

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