IGBT Module 1200V 75A JIAENSEMI GL75HF120F1UR1 Featuring Planar Field Stop Technology for Industrial
Key Attributes
Model Number:
GL75HF120F1UR1
Product Custom Attributes
Td(off):
160ns
Pd - Power Dissipation:
445W
Td(on):
38ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.15nF
Input Capacitance(Cies):
3.2nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
150A
Switching Energy(Eoff):
2.4mJ
Turn-On Energy (Eon):
5.7mJ
Mfr. Part #:
GL75HF120F1UR1
Product Description
Product Overview
The GL75HF120F1UR1 is a 1200V, 75A IGBT half-bridge module featuring Planar Field-stop Technology for high RBSOA capability and low turn-off losses. It is ideal for applications such as inductive heating, welding, and high-frequency switching.
Product Attributes
- Brand: JIAEN Semiconductor Co., Ltd
- Material of Module Baseplate: Cu
- Internal Isolation: Al2O3 (basic insulation, class 1, IEC 61140)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units | Notes |
| IGBT Maximum Rated Values | VCES | Collector-Emitter VoltageTvj=25 | 1200 | V | |||
| VGES | Gate-Emitter Voltage | ±20 | V | Peak | |||
| IC | Continuous Collector Current ( TC=80,Tvj max=150) | 75 | A | ||||
| ICRM | Repetitive Peak Collector Current | 150 | A | ||||
| PD | Maximum Power Dissipation ( TC=25,Tvj max=150) | 445 | W | Total | |||
| IGBT Characteristics | VCE(sat) | Collector-Emitter Saturation Voltage VGE=15V, IC=75A | 2.5 | 3.1 | V | Tvj=25 | |
| VGE=15V, IC=75A | 3.0 | V | Tvj=125 | ||||
| VGE=15V, IC=75A | 3.0 | V | Tvj=150 | ||||
| VGE(th) | Gate Threshold Voltage VGE=VCE, IC=1mA | 5.0 | 6.0 | 7.0 | V | Tvj=25 | |
| Qg | Total Gate Charge VGE=-15V+15V | 0.53 | uC | ||||
| R Gint | Internal Gate Resistor | 5 | Ω | Tvj=25 | |||
| Cies | Input Capacitance VCE=25V VGE=0V f=1MHz | 3.2 | nF | ||||
| IGBT Switching Characteristics | t d(on) | Turn-on Delay Time, inductive load VCE = 600V IC = 75A VGE = ±15V RGon = 1.0Ω | 38 | ns | Tvj=25 | ||
| 39 | ns | Tvj=125 | |||||
| 39 | ns | Tvj=150 | |||||
| t r | Turn-on Rise Time, inductive load | 25 | ns | Tvj=25 | |||
| 28 | ns | Tvj=125 | |||||
| 30 | ns | Tvj=150 | |||||
| t d(off) | Turn-off Delay Time, inductive load VCE = 600V IC = 75A VGE = ±15V RGoff = 1.0Ω | 160 | ns | Tvj=25 | |||
| 195 | ns | Tvj=125 | |||||
| 200 | ns | Tvj=150 | |||||
| IGBT Switching Losses | Eon | Turn-on Switching Loss, inductive load VCE = 600V IC = 75A VGE = ±15V RGon = 1.0Ω RGoff = 1.0Ω Lσ = 80nH | 5.7 | mJ | Tvj=25 | ||
| 9.0 | mJ | Tvj=125 | |||||
| 10.0 | mJ | Tvj=150 | |||||
| IGBT Thermal Resistance | Rth j-c | Thermal Resistance, Junction to Case | 0.28 | K/W | Per IGBT | ||
| 0.28 | K/W | Per IGBT | |||||
| 0.28 | K/W | Per IGBT | |||||
| Diode Maximum Rated Values | VRRM | Repetitive Peak Reverse Voltage | 1200 | V | |||
| IF | Continuous DC Forward Current | 75 | A | ||||
| IFRM | Repetitive Peak Collector Current | 150 | A | ||||
| Diode Characteristics | VF | Diode Forward Voltage IF = 75A VGE = 0V | 1.9 | 2.5 | V | Tvj=25 | |
| IF = 75A VGE = 0V | 1.95 | V | Tvj=125 | ||||
| IF = 75A VGE = 0V | 1.95 | V | Tvj=150 | ||||
| Diode Switching Losses | Erec | Reverse Recovery Energy IF = 75A, VCE = 600V | 2.2 | mJ | Tvj=25 | ||
| IF = 75A, VCE = 600V | 4.0 | mJ | Tvj=125 | ||||
| IF = 75A, VCE = 600V | 4.8 | mJ | Tvj=150 | ||||
| Diode Thermal Resistance | Rth j-c | Thermal Resistance, Junction to Case | 0.51 | K/W | Per Diode | ||
| 0.51 | K/W | Per Diode | |||||
| Module | Rthc-h | Thermal ResistanceCase to Heatsink | 0.05 | K/W | Per Module | ||
| LsCE | Stray Inductance Module | 30 | nH | ||||
| RCC+EE RAA+CC | Module Lead Resistance Terminals-Chip | 0.65 | mΩ | TC = 25 Per Switch | |||
| Tstg | Storage Temperature | -40 | 125 | ||||
| M | Module Mounting Torque | 3.0 | 5.0 | Nm | M6 screws | ||
| M | Terminal Mounting Torque | 2.5 | 6.0 | Nm | M5 screws | ||
| G | Weight | 145 | g | ||||
| VISO | Isolation Test Voltage | RMS, f=50 Hz, t=1 min | 3.0 | kV | |||
| Clearance Distance in Air | Terminal to heatsink | 17 | mm | ||||
| Terminal to terminal | 9.5 | mm | |||||
| Surface Creepage Distance | Terminal to heatsink | 17 | mm | ||||
| Terminal to terminal | 20 | mm | |||||
| CTI | Comparative Tracking Index | >200 |
2509021810_JIAENSEMI-GL75HF120F1UR1_C51484095.pdf
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