insulated gate bipolar transistor HXY MOSFET IXYH55N120C4-HXY with trench and field stop technology

Key Attributes
Model Number: IXYH55N120C4-HXY
Product Custom Attributes
Pd - Power Dissipation:
652W
Td(off):
280ns
Td(on):
39ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
179pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
502nC@15V
Reverse Recovery Time(trr):
44ns
Switching Energy(Eoff):
2.9mJ
Turn-On Energy (Eon):
2.2mJ
Input Capacitance(Cies):
6.557nF
Pulsed Current- Forward(Ifm):
240A
Output Capacitance(Coes):
244pF
Mfr. Part #:
IXYH55N120C4-HXY
Package:
TO-247
Product Description

Product Overview

The IXYH55N120C4 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for applications such as motor drives, PTC, and OBC.

Product Attributes

  • Brand: HUAXUANYANG
  • Origin: HXY ELECTRONICS CO.,LTD
  • Certifications: Halogen Free and Green Devices Available (RoHS Compliant)

Technical Specifications

ParameterKey CharacteristicsValueUnit
VCESCollector-Emitter Voltage1200V
ICCollector Current @TC=25C120A
ICCollector Current @TC=100C60A
VCE(sat).typCollector-Emitter Saturation Voltage (Typ)1.65V
PDPower Dissipation @TC=25C652W
TJmax, TstgOperating Junction and Storage Temperature Range55 to 175
RJCJunction-to-Case (IGBT)0.23/W
RJCJunction-to-Case (Diode)0.44/W
RJAJunction-to-Ambient40/W
VGE(TH)Gate Threshold Voltage (Typ)5.3V
ICESCollector-Emitter Leakage Current @VCE=1200V, VGE=0V (Max)10A
CiesInput Capacitance (Typ)6557pF
QgGate charge (Typ)502nC
td(on)Turn-on Delay Time (Typ) @TJ=25C39ns
trRise Time (Typ) @TJ=25C46ns
td(off)Turn-Off Delay Time (Typ) @TJ=25C280ns
tfFall Time (Typ) @TJ=25C198ns
EonTurn-On Switching Loss (Typ) @TJ=25C2.20mJ
EoffTurn-Off Switching Loss (Typ) @TJ=25C2.90mJ
TrrReverse Recovery Time (Typ) @TJ=25C44ns
QrrReverse Recovery Charge (Typ) @TJ=25C130nC
IrrmReverse Recovery Current (Typ) @TJ=25C4.8A

2509181738_HXY-MOSFET-IXYH55N120C4-HXY_C49003437.pdf

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