IGBT Module JIAENSEMI JNG50T120LIS2 Featuring High Speed Switching and Energy Saving Characteristics
Key Attributes
Model Number:
JNG50T120LIS2
Product Custom Attributes
Pd - Power Dissipation:
329W
Td(off):
435ns
Td(on):
94ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
49pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Gate Charge(Qg):
243nC
Operating Temperature:
-40℃~+150℃
Reverse Recovery Time(trr):
1.02us
Switching Energy(Eoff):
3.6mJ
Turn-On Energy (Eon):
4.3mJ
Input Capacitance(Cies):
7.33nF
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
219pF
Mfr. Part #:
JNG50T120LIS2
Package:
TO264
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.
Product Attributes
- Brand: JIAEN
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Conditions | Value | Units |
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | + 20 | V | |
| Continuous Collector Current (IC) | TC=25 | 100 | A |
| Continuous Collector Current (IC) | TC=100 | 50 | A |
| Pulsed Collector Current (ICM) | Note 1 | 150 | A |
| Diode Continuous Forward Current (IF) | TC=100 | 50 | A |
| Diode Maximum Forward Current (IFM) | Note 1 | 150 | A |
| Short Circuit Withstand Time (tsc) | 10 | us | |
| Maximum Power Dissipation (PD) | TC=25 | 329 | W |
| Maximum Power Dissipation (PD) | TC=100 | 131 | W |
| Operating Junction Temperature Range (TJ) | -40 to +150 | ||
| Storage Temperature Range (TSTG) | -40 to +150 | ||
| Thermal Resistance, Junction to case (Rth j-c) | for IGBT | 0.38 | / W |
| Thermal Resistance, Junction to case (Rth j-c) | for Diode | 0.5 | / W |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 25 | / W | |
| Collector-Emitter Breakdown Voltage (BVCES) | VGE= 0V, IC= 250uA | 1200 | V |
| Collector-Emitter Leakage Current (ICES) | VCE= 1200V, VGE= 0V | - | 100 uA |
| Gate Leakage Current, Forward (IGES) | VGE= + 20V, VCE= 0V | - | + 100 nA |
| Gate Threshold Voltage (VGE(th)) | VGE= VCE, IC= 250uA | 4.5 - 6.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC= 50A | 1.8 | V |
| Total Gate Charge (Qg) | VCC=960V VGE=15V IC=50A | 243 | nC |
| Gate-Emitter Charge (Qge) | 64 | nC | |
| Gate-Collector Charge (Qgc) | 104 | nC | |
| Turn-on Delay Time (td(on)) | VCC=600V VGE=15V IC=50A RG=15 Inductive Load TC=25 | 94 | ns |
| Turn-on Rise Time (tr) | 98 | ns | |
| Turn-off Delay Time (td(off)) | 435 | ns | |
| Turn-off Fall Time (tf) | 187 | ns | |
| Turn-on Switching Loss (Eon) | 4.3 | mJ | |
| Turn-off Switching Loss (Eoff) | 3.6 | mJ | |
| Total Switching Loss (Ets) | 7.9 | mJ | |
| Input Capacitance (Cies) | VCE=25V VGE=0V f = 100KHz | 7330 | pF |
| Output Capacitance (Coes) | 219 | pF | |
| Reverse Transfer Capacitance (Cres) | 49 | pF | |
| Diode Forward Voltage (VF) | IF=50A | 2.2 - 3.5 | V |
| Diode Reverse Recovery Time (trr) | VCE = 600V IF= 50A diF/dt = 900A/us | 1020 | ns |
| Diode peak Reverse Recovery Current (IRR) | 28 | A | |
| Diode Reverse Recovery Charge (QRR) | 6312 | nC |
2509021810_JIAENSEMI-JNG50T120LIS2_C51484274.pdf
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