Power electronics MOSFET HXY MOSFET IGW50N60H3-HXY with easy paralleling and low EMI characteristics
Key Attributes
Model Number:
IGW50N60H3-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
110ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.916nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
71nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
510uJ
Turn-On Energy (Eon):
1.35mJ
Mfr. Part #:
IGW50N60H3-HXY
Package:
TO-247
Product Description
Product Overview
The IGW50N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power electronic applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: IGW50N60H3
- Package: TO-247
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 80 | A | ||
| IC | DC collector current(1) | TC = 100C | 50 | A | ||
| ICM | Pulsed collector current | TC = 25C | 200 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 80 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 50 | A | ||
| IFM | Diode pulsed current | TC = 25C | 200 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010), TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 129 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | V | ||
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 125C | 1.93 | V | ||
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 175C | 2.0 | V | ||
| VF | Diode forward voltage | TVJ = 25 C, IF=40A | 1.85 | V | ||
| VF | Diode forward voltage | VGE = 0V , IC = 50A | 1.85 | V | ||
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 125C | 1.6 | V | ||
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 175C | 1.45 | V | ||
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | 50 | mA | ||
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | 100 | nA | ||
| gfs | Transconductance | VGE = 20V, IC = 50A | 56 | S | ||
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 1916 | pF | ||
| Coes | Output Capacitance | 139 | pF | |||
| Cres | Reverse Transfer Capacitance | 13 | pF | |||
| Qg | Gate Charge | VGE = 0 to 15V, VCE = 520V, IC = 50A | 71 | nC | ||
| Qge | Gate to Emitter charge | 10 | nC | |||
| Qgc | Gate to Collector charge | 21 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGE = 15V, VCC = 400V, IC= 50A, RG(off) = 12,RG(on) = 12 | 17 | ns | ||
| tr | Turn-On Rise Time | 30 | ns | |||
| td(off) | Turn-Off Delay Time | 110 | ns | |||
| tf | Turn-Off Fall Time | 34 | ns | |||
| Eon | Turn-on energy | 1.35 | mJ | |||
| Eoff | Turn-off energy | 0.51 | mJ | |||
| Ets | Total switching energy | 1.86 | mJ | |||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 50 A, di/dt = 400 A/S | 56 | ns | ||
| Qrr | Reverse recovery charge | 0.27 | mC | |||
| Irrm | Peak reverse recovery current | 8 | A | |||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case | 0.65 | C/W | |||
| RJC | Diode Thermal resistance: junction - case | 0.58 | C/W | |||
Applications: UPS, EV-Charger, Solar String Inverter, Energy Storage Inverter.
Features:
- 650V, 50A IGBT
- Easy paralleling capability due to positive temperature coefficient in V CESAT
- Low EMI
- Low Gate Charge
- Low Saturation Voltage
- Maximum junction temperature T VJmax=175C
2509181739_HXY-MOSFET-IGW50N60H3-HXY_C49003467.pdf
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