650V 25A Trench IGBT JIAENSEMI JNG25T65PS1 Optimized for Soft Switching and Motor Drive Applications
Key Attributes
Model Number:
JNG25T65PS1
Product Custom Attributes
Td(off):
75ns
Pd - Power Dissipation:
139W
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
8pF
Input Capacitance(Cies):
978pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
75A
Output Capacitance(Coes):
90pF
Reverse Recovery Time(trr):
60ns
Switching Energy(Eoff):
490uJ
Turn-On Energy (Eon):
660uJ
Mfr. Part #:
JNG25T65PS1
Package:
TO-220
Product Description
Product Overview
The JNG25T65PS1 is a 650V, 25A Trench IGBT from JIAEN Semiconductor, designed for high-speed switching and improved system efficiency. It features soft current turn-off waveforms and a square RBSOA, making it suitable for applications such as motor control, general inverters, and other soft switching scenarios. These IGBTs offer lower losses and higher energy efficiency.
Product Attributes
- Brand: JIAEN
- Model: JNG25T65PS1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 50 | A | |||
| Continuous Collector Current (TC=100) | IC | 25 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 75 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 25 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 75 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 139 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 56 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 0.9 | / W | |||
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 1.2 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 62 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | V | ||
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | 100 | uA | ||
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | 100 | nA | ||
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | 6.9 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 25A | 2.1 | 2.7 | V | |
| Total Gate Charge | Qg | VCC=480V, VGE=15V, IC=25A | 31.2 | nC | ||
| Gate-Emitter Charge | Qge | 7.7 | nC | |||
| Gate-Collector Charge | Qgc | 13.3 | nC | |||
| Turn-on Delay Time | td(on) | VCC=400V, VGE=15V, IC=25A, RG=15 | 22 | ns | ||
| Turn-on Rise Time | tr | 44 | ns | |||
| Turn-off Delay Time | td(off) | 75 | ns | |||
| Turn-off Fall Time | tf | 88 | ns | |||
| Turn-on Switching Loss | Eon | 0.66 | mJ | |||
| Turn-off Switching Loss | Eoff | 0.49 | mJ | |||
| Total Switching Loss | Ets | 1.15 | mJ | |||
| Input Capacitance | Cies | VCE=25V, VGE=0V, f = 1MHz | 978 | pF | ||
| Output Capacitance | Coes | 90 | pF | |||
| Reverse Transfer Capacitance | Cres | 8 | pF | |||
| Diode Forward Voltage | VF | IF=25A | 1.65 | 3.0 | V | |
| Diode Reverse Recovery Time | trr | VCE = 400V, IF= 25A, Rg=15 | 60 | ns | ||
| Diode peak Reverse Recovery Current | Irr | 15.6 | A | |||
| Diode Reverse Recovery Charge | Qrr | 518 | nC |
2509021810_JIAENSEMI-JNG25T65PS1_C51484252.pdf
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