Jilin Sino Microelectronics 3DD4617HZ NPN power transistor fast switching high voltage for electronic

Key Attributes
Model Number: 3DD4617HZ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
14V
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
75W
Transition Frequency(fT):
5MHz
Number:
1 NPN
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
450V
Mfr. Part #:
3DD4617HZ
Package:
TO-220
Product Description

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4617H

The 3DD4617H is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers robust performance with high voltage and current capabilities.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd
  • Origin: China
  • Certifications: Halogen-Free options available

Technical Specifications

Order Code Marking Package Halogen-Reel Halogen-Free-Reel Halogen-Bag Halogen-Free-Bag Halogen-Tube Halogen-Free-Tube
3DD4617H-R-A 4617H DPAK
3DD4617H-R-AR 4617H DPAK
3DD4617H-R-C 4617H DPAK
3DD4617H-R-CR 4617H DPAK
3DD4617H-U-A 4617H TO-252
3DD4617H-U-AR 4617H TO-252
3DD4617H-U-C 4617H TO-252
3DD4617H-U-CR 4617H TO-252
3DD4617H-MP-C 4617H TO-126P
3DD4617H-MP-CR 4617H TO-126P
3DD4617H-MP-B 4617H TO-126P
3DD4617H-MP-BR 4617H TO-126P
3DD4617H-VB-C 4617H TO-251
3DD4617H-VB-CR 4617H TO-251
3DD4617H-VB-B 4617H TO-251
3DD4617H-VB-BR 4617H TO-251
3DD4617H-CA-C 4617H TO-220
3DD4617H-CA-CR 4617H TO-220
3DD4617H-CA-B 4617H TO-220
3DD4617H-CA-BR 4617H TO-220
3DD4617H-C-C 4617H TO-220C
3DD4617H-C-CR 4617H TO-220C
3DD4617H-C-B 4617H TO-220
3DD4617H-C-BR 4617H TO-220
3DD4617H-FA-B 4617H TO-220HF
3DD4617H-FA-BR 4617H TO-220HF
Parameter Symbol Value Unit Tests Conditions Min Typ Max
Collector-Emitter Voltage (VBE=0) VCES 800 V
Collector-Emitter Voltage (IB=0) VCEO 450 V
Emitter-Base Voltage VEBO 9 V
Collector Current (DC) IC 4.0 A
Collector Current (pulse) ICP 8 A
Total Dissipation (TO-126P/251) PC 30 W
Total Dissipation (TO-252/DPAK/220HF) PC 40 W
Total Dissipation (TO-220/TO-220C) PC 75 W
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
Breakdown Voltage Collector-Emitter V(BR)CEO 450 V IC=5mA,IB=0 500
Breakdown Voltage Collector-Base V(BR)CBO 800 V IC=1mA,IE=0 900
Breakdown Voltage Emitter-Base V(BR)EBO 9 V IE=1mA,IC=0 14
Collector Cutoff Current ICBO 0.1 mA VCB=800V, IE=0
Emitter Cutoff Current ICEO 1 mA VCE=450V,IB=0
Emitter Cutoff Current IEBO 0.1 mA VEB=9V, IC=0
DC Current Gain hFE 20 - VCE =5V, IC=500mA 30 40
DC Current Gain hFE 5.0 - VCE=5V, IC=4.0A 9.5
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC=4A, IB=0.8A 1.3
Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=4A, IB=0.8A 1.5
Fall Time Tf 0.7 uS Vcc=24V Ic=2A IB1=-IB2=0.4A
Transition Frequency fT 5 MHz VCE=10V, IC=0.5A
Thermal Resistance Junction Case (TO-126P/251) Rth(j-c) 4.167 ℃/W
Thermal Resistance Junction Case (252/DPAK/220HF) Rth(j-c) 3.125 ℃/W
Thermal Resistance Junction Case (TO-220/ TO-220C) Rth(j-c) 1.670 ℃/W

2409272332_Jilin-Sino-Microelectronics-3DD4617HZ_C3020066.pdf

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