Jilin Sino Microelectronics 3DD13007MD transistor offering high breakdown voltage for power electronics
Key Attributes
Model Number:
3DD13007MD
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
80W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD13007MD
Package:
TO-220HF
Product Description
Product Overview
The 3DD13007MD is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | IC (A) | VCEO (V) | PC (W) |
| 3DD13007MD-C-B | 13007MD | TO-220C | 8 | 400 | 80 |
| 3DD13007MD-C1-B | 13007MD | TO-220C-S1 | 8 | 400 | 80 |
| 3DD13007MD-FA-B | 13007MD | TO-220HF | 8 | 400 | 45 |
| 3DD13007MD-F-B | 13007MD | TO-220MF | 8 | 400 | 45 |
| 3DD13007MD-F1-B | 13007MD | TO-220MF-K1 | 8 | 400 | 45 |
| 3DD13007MD-B-B | 13007MD | TO-262 | 8 | 400 | 80 |
| 3DD13007MD-S-C | 13007MD | TO-263 | 8 | 400 | 80 |
| 3DD13007MD-S-A | 13007MD | TO-263 | 8 | 400 | 80 |
Main Characteristics
| Parameter | Symbol | Value | Unit |
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V |
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | V |
| Emitter-Base Voltage | VEBO | 9 | V |
| Collector Current (DC) | IC | 8 | A |
| Collector Current (pulse) | ICP | 16 | A |
| Base Current (DC) | IB | 4 | A |
| Base Current (pulse) | IBP | 8 | A |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55~+150 |
Electrical Characteristics
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| V(BR)CEO | IC=10mA,IB=0 | 400 | - | - | V |
| V(BR)CBO | IC=1mA,IE=0 | 700 | - | - | V |
| V(BR)EBO | IE=1mA,IC=0 | 9 | - | - | V |
| ICBO | VCB=700V, IE=0 | - | - | 100 | A |
| ICEO | VCE=400V,IB=0 | - | - | 50 | A |
| IEBO | VEB=9V, IC=0 | - | - | 10 | A |
| Hfe(1) | VCE =5V, IC=1A | 8 | - | 50 | - |
| Hfe(2) | VCE =5V, IC=5A | 5 | - | - | - |
| VCE(sat)(1) | IC=5A, IB=1A | - | - | 1.8 | V |
| VCE(sat)(2) | IC=8A, IB=2A | - | - | 2.5 | V |
| VBE(sat) | IC=5A, IB=1A | - | - | 2.0 | V |
| tf | VCC=24V IC=5A,IB1=-IB2=1A | - | - | 0.7 | S |
| ts | - | - | - | 4 | S |
| fT | VCE=10V, IC=0.5A | 4 | - | - | MHz |
2409280102_Jilin-Sino-Microelectronics-3DD13007MD_C2693273.pdf
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