Power Semiconductor HXY MOSFET IGW40T120FKSA1-HXY with TO247 Package and 160A Pulsed Collector Current
Key Attributes
Model Number:
IGW40T120FKSA1-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
Input Capacitance(Cies):
3.98nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Reverse Recovery Time(trr):
94ns
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
IGW40T120FKSA1-HXY
Package:
TO-247
Product Description
Product Overview
The IGW40T120FKSA1 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IGW40T120FKSA1
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen Free and Green Devices Available
- Package Type: TO-247
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ (@IC=40A, VGE=15V, TJ=25C) | 1.70 | V | Collector-Emitter Saturation Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) (@IC=1mA) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF (@IF=40A, TJ=25C) | 1.85 | V | Diode Forward Voltage |
| ICES (@VCE=1200V, VGE=0V) | 10 | A | Collector-Emitter Leakage Current |
| IGES(F) (@VGE=+20V) | 200 | nA | Gate-Emitter Forward Leakage Current |
| IGES(R) (@VGE=-20V) | -200 | nA | Gate-Emitter Reverse Leakage Current |
| Cies (@VCE=25V, f=1.0MHz) | 3980 | pF | Input Capacitance |
| Coes (@VGE=0V, VCE=25V, f=1.0MHz) | 157 | pF | Output Capacitance |
| Cres (@VGE=0V, VCE=25V, f=1.0MHz) | 93 | pF | Reverse Transfer Capacitance |
| Qg (@VCC=960V, ICE=40A, VGE=15V) | 346 | nC | Gate charge |
| Eon (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C) | 3.60 | mJ | Total Switching Loss |
| Trr (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25C) | 94 | ns | Reverse Recovery Time |
| Qrr (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25C) | 225 | nC | Reverse Recovery Charge |
| Irrm (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25C) | 9.7 | A | Reverse Recovery Current |
2509181738_HXY-MOSFET-IGW40T120FKSA1-HXY_C49003436.pdf
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