High voltage power transistor Jilin Sino-Microelectronics 3DD13005ED NPN transistor for switching power supplies
Key Attributes
Model Number:
3DD13005ED
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
75W
Transition Frequency(fT):
4MHz
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
3DD13005ED
Package:
TO-126S
Product Description
Product Overview
The 3DD13005ED is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value(min) | Value(typ) | Value(max) | Unit | Tests conditions |
| Collector- Emitter VoltageVBE=0 | VCES | 800 | V | |||
| Collector- Emitter VoltageIB=0 | VCEO | 400 | V | |||
| Emitter-Base Voltage | VEBO | 9 | V | |||
| Collector CurrentDC | IC | 4 | A | |||
| Collector Currentpulse | ICP | 8 | A | Pulse Width = 5.0 ms, Duty Cycle 10% | ||
| Base CurrentDC | IB | 2 | A | |||
| Base Currentpulse | IBP | 4 | A | |||
| Total Dissipation (IPAK/126/126S/220HF) | PC | 40 | W | |||
| Total Dissipation (DPAK/TO-252) | PC | 50 | W | |||
| Total Dissipation (TO-220C/262/263) | PC | 75 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Breakdown Voltage Collector-Emitter | V(BR)CEO | 400 | V | IC=10mA,IB=0 | ||
| Breakdown Voltage Collector-Base | V(BR)CBO | 800 | V | IC=1mA,IE=0 | ||
| Breakdown Voltage Emitter-Base | V(BR)EBO | 9 | V | IE=1mA,IC=0 | ||
| Collector Cutoff Current | ICBO | 100 | A | VCB=700V, IE=0 | ||
| Collector Cutoff Current | ICEO | 50 | A | VCE=400V,IB=0 | ||
| Emitter Cutoff Current | IEBO | 10 | A | VEB=9V, IC=0 | ||
| DC Current Gain | Hfe(1) | 20 | 30 | VCE =10V, IC=500mA | ||
| DC Current Gain | Hfe(2) | 5 | VCE =5V, IC=2A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | V | IC=2A, IB=0.4A | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.8 | V | IC=2A, IB=0.5A | ||
| Fall Time | tf | 0.7 | S | VCC=24V IC=2A,IB1=-IB2=0.4A | ||
| Storage Time | ts | 5 | S | |||
| Transition Frequency | fT | 4 | MHz | VCE=10V, IC=0.5A | ||
| Thermal Resistance Junction Case IPAK/126/126S/220HF | Rth(j-c) | 3.125 | /W | |||
| Thermal Resistance Junction Case DPAK/TO-252 | Rth(j-c) | 2.50 | /W | |||
| Thermal Resistance Junction Case TO-220C/262/263 | Rth(j-c) | 1.67 | /W |
2409272332_Jilin-Sino-Microelectronics-3DD13005ED_C3020070.pdf
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