Durable HXY MOSFET 2P4M designed for hair straighteners and electromagnetic interference resistance
Key Attributes
Model Number:
2P4M
Product Custom Attributes
Holding Current (Ih):
3mA
Current - Gate Trigger(Igt):
90uA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A@50Hz
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
2P4M
Package:
TO-126
Product Description
Product Overview
The 2P4M 2A SCR series offers a high dv/dt rate with robust resistance to electromagnetic interference. These thyristors are particularly recommended for applications such as residual current circuit breakers, hair straighteners, and igniters.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: 2P4M
- Origin: Shenzhen, China
- Material: Plastic-Encapsulate
- Package Outline: TO-126
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Electrical Characteristics | IGT | VD=12V, RL=100 | 0.8 | V | ||
| VGT | 2.500 | V | ||||
| VGD | VD=VDRM, Tj=110C | 0.2 | V | |||
| Holding Current | IH | IT=50mA | 0.098 | A | ||
| dV/dt | dV/dt | VD=2/3VDRM, Tj=110C, RGK=1K | 20 | V/s | ||
| On-state Voltage | VTM | ITM=2A | 1.6 | V | ||
| Leakage Current | IDRM/IRRM | VD=VDRM=VRRM, RGK=1k | 0.0001 | A | ||
| Absolute Maximum Ratings | Storage junction temperature range | Tstg | -40 | 150 | C | |
| Operating junction temperature range | Tj | 125 | C | |||
| Repetitive peak off-state voltage | VDRM | Tj=25C | 600 | V | ||
| Repetitive peak reverse voltage | VRRM | Tj=25C | 600 | V | ||
| RMS on-state current | IT(RMS) | 2 | A | |||
| Non repetitive surge peak on-state current | ITSM | Full cycle, F=50Hz | 20 | A |
Package Outline Dimensions (TO-126)
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| A | 1.100 - 1.500 | 0.043 - 0.059 |
| A1 | 0.660 - 0.860 | 0.026 - 0.034 |
| b | 1.170 - 1.370 | 0.046 - 0.054 |
| b1 | 0.450 - 0.600 | 0.018 - 0.024 |
| c | 2.290 TYP | 0.090 TYP |
| D | 7.400 - 7.800 | 0.291 - 0.307 |
| E | 10.600 - 11.000 | 0.417 - 0.433 |
| e | 4.480 - 4.680 | 0.176 - 0.184 |
| e1 | 0.000 - 0.300 | 0.000 - 0.012 |
| h | 15.300 - 15.700 | 0.602 - 0.618 |
| L | 2.100 - 2.300 | 0.083 - 0.091 |
| L1 | 3.900 - 4.100 | 0.154 - 0.161 |
| P | 3.000 - 3.200 | 0.118 - 0.126 |
2508201703_HXY-MOSFET-2P4M_C50285065.pdf
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