power switching device HXY MOSFET IHW30N135R5-HXY suitable for UPS EV chargers and solar inverters
Key Attributes
Model Number:
IHW30N135R5-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
190ns
Td(on):
51ns
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
Reverse Transfer Capacitance (Cres):
18pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.5V@0.5mA
Gate Charge(Qg):
120nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
330ns
Switching Energy(Eoff):
1.3mJ
Turn-On Energy (Eon):
2.6mJ
Input Capacitance(Cies):
3.8nF
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
51pF
Mfr. Part #:
IHW30N135R5-HXY
Package:
TO-247
Product Description
Product Overview
The IHW30N135R5 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IHW30N135R5
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Type | VCE | IC | VCE(SAT) (Tvj = 25 C, VGE = 15 V, IC=30A) | VF (Tvj = 25 C, IF=30A) | Package | Packing |
|---|---|---|---|---|---|---|
| IGBT | 1350 V | 30 A | 1.65 V | 1.85 V | TO-247 | 30PCS |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector emitter voltage | V(BR)CES | Tvj = 25 C | 1350 | V |
| Collector emitter saturation voltage | VCEsat | VGE = 15 V, IC =30 A, Tvj = 25 C | 1.65 - 1.95 | V |
| Collector emitter saturation voltage | VCEsat | VGE = 15 V, IC =30 A, Tvj = 175 C | - 1.95 2.25 | V |
| Diode forward voltage | VF | VGE = 0 V, IC =30 A, Tvj = 25 C | 1.85 - 2.0 | V |
| Diode forward voltage | VF | VGE = 0 V, IC =30 A, Tvj = 175 C | 1.95 | V |
| Gate-emitter threshold voltage | VGE(th) | VCE = VGE, IC = 0.5 mA, Tvj = 25 C | 5.5 - 6.9 | V |
| Zero gate voltage collector current | ICES | VCE = 1350 V, VGE = 0 V, Tvj = 25 C | - 100 | A |
| Gate-emitter leakage current | IGES | VGE = 20 V, VCE = 0 V | - 200 | nA |
| Transconductance | gfs | VGE = 15 V, IC=20A | 30 | S |
| Input capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 1MHz | - 3800 | pF |
| Output capacitance | Coes | - 51 | - | pF |
| Reverse transfer capacitance | Cres | - 18 | - | pF |
| Gate charge | Qg | VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V | - 120 | nC |
| Gate to emitter charge | Qge | - 35 | - | nC |
| Gate to collector charge | Qgc | - 51 | - | nC |
| Thermal resistance junction - case | RthJC | IGBT | 0.6 | C / W |
| Thermal resistance junction - ambient | RthJA | IGBT | 40 | C / W |
| Turn-on delay time | td(on) | VCC = 600 V, IC =30 A, VGE = 15 V, RG(on) = 10, RG(off) = 10 | - 51 | ns |
| Rise time | tr | - 52 | - | ns |
| Turn-off delay time | td(off) | - 190 | - | ns |
| Fall time | tf | - 152 | - | ns |
| Turn-on energy | Eon | - 2.6 | - | mJ |
| Turn-off energy | Eoff | - 1.3 | - | mJ |
| Total switching energy | Ets | - 3.9 | - | mJ |
| Reverse recovery time | trr | VR = 600 V, IF = 30 A, di/dt = 600 A/S | - 330 | ns |
| Reverse recovery charge | Qrr | - 2.0 | - | C |
| Peak reverse recovery current | Irrm | - 12 | - | A |
2509181738_HXY-MOSFET-IHW30N135R5-HXY_C49003405.pdf
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