Powerful HXY MOSFET RGT00TS65DGC13-HXY IGBT with TO247 package and 650 volt collector emitter voltage
Product Overview
The RGT00TS65DGC13 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high efficiency and reliability.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: RGT00TS65DGC13
- Package Type: TO-247
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 100 | A | Collector Current |
| IC (@TC=100C) | 50 | A | Collector Current |
| VCE(sat).typ (@IC=50A, TJ=25C) | 1.65 | V | Collector-Emitter Saturation Voltage (Typical) |
| VGE(TH) (@IC=1mA) | 4.5 - 6.5 | V | Gate Threshold Voltage |
| PD (@TC=25C) | 300 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.50 | /W | Junction-to-Case Thermal Resistance (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| Features | Positive temperature coefficient, Fast Switching, Low VCE(sat), Reliable and Rugged, Halogen Free and Green Devices Available, RoHS Compliant | ||
| Applications | UPS, Motor drives, Boost, Portable power station | ||
2509181737_HXY-MOSFET-RGT00TS65DGC13-HXY_C49003387.pdf
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