N channel MOSFET Jilin Sino Microelectronics JCS4N60FC 220MF with fast switching and low gate charge
Key Attributes
Model Number:
JCS4N60FC-220MF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Input Capacitance(Ciss):
860pF
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
40.8W
Gate Charge(Qg):
17.5nC@10V
Mfr. Part #:
JCS4N60FC-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS4N60C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability. This RoHS compliant product is available in various packages and configurations.
Product Attributes
- Brand: JILIN SINO-MICROELECTRONICS CO., LTD.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson (Typ, ) | Rdson (Max, ) | Qg-typ (nC) |
| JCS4N60VC-V-B / JCS4N60VC-V-BR | N/A | IPAK | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60VC-V2-B / JCS4N60VC-V2-BR | N/A | IPAK-S2 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60CC-C-B / JCS4N60CC-C-BR | N/A | TO-220C | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60FC-F-B / JCS4N60FC-F-BR | N/A | TO-220MF | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60FC-F2-B / JCS4N60FC-F2-BR | N/A | TO-220MF-K2 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60RC-R-B / JCS4N60RC-R-BR / JCS4N60RC-R-A / JCS4N60RC-R-AR | JCS4N60R | DPAK | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60BC-B-B / JCS4N60BC-B-BR | N/A | TO-262 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 25 | - | 2.0 | 2.5 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 642.1 | 860 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 70.82 | 100 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 3.06 | 15 | pF |
| Total Gate Charge | Qg | VDS =480V , ID=4.0A VGS =10V | - | 17.5 | 25 | nC |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s | - | 380.7 | 900 | ns |
2409280102_Jilin-Sino-Microelectronics-JCS4N60FC-220MF_C272517.pdf
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