IGBT Transistor HXY MOSFET BIDW50N65T-HXY Featuring Reduced Conduction Losses for Motor Drives and UPS
Key Attributes
Model Number:
BIDW50N65T-HXY
Product Custom Attributes
Td(off):
122ns
Pd - Power Dissipation:
300W
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
92pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
179nC@15V
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.14mJ
Turn-On Energy (Eon):
1.38mJ
Input Capacitance(Cies):
3.363nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
206pF
Mfr. Part #:
BIDW50N65T-HXY
Package:
TO-247
Product Description
Product Overview
The BIDW50N65T is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy capability. It is suitable for applications such as UPS, motor drives, boost converters, and portable power stations.
Product Attributes
- Brand: HUAXUANYANG
- Model: BIDW50N65T
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Technology: Trench and Field Stop (T-FS)
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Package Type: TO-247
Technical Specifications
| Parameter | Value | Unit | Conditions |
| Absolute Ratings | |||
| VCES | 650 | V | |
| IC | 100 | A | @TC=25C |
| IC | 50 | A | @TC=100C |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| IF | 100 | A | Diode Continuous Forward Current @TC=25C |
| IF | 50 | A | Diode Continuous Forward Current @TC=100C |
| IFM | 200 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | 30 | V | |
| tSC | 4 | s | Short circuit withstand time VGE=15V, VCC400V, allowed number of short circuits<1000, times between short circuits1.0s, TJ175C |
| PD | 300 | W | @TC=25C |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| Thermal Characteristics | |||
| RJC (IGBT) | 0.50 | /W | Junction-to-Case |
| RJC (Diode) | 0.65 | /W | Junction-to-Case |
| RJA | 40 | /W | Junction-to-Ambient |
| Electrical Characteristics (Static) | |||
| VCES (Breakdown Voltage) | 650 | V | VGE =0V, IC=1mA |
| VCE(sat) | 1.65 | V | VGE =15V, IC =50A, TJ=25 (Typ.) |
| VGE(TH) (Gate Threshold Voltage) | 4.5 - 6.5 | V | VCE=VGE, IC=1mA |
| VF (Diode Forward Voltage) | 1.45 | V | IF=50A, TJ=25 (Typ.) |
| ICES (Leakage Current) | 10 | A | VCE=650V, VGE=0V (Max.) |
| IGES(F) (Gate Forward Leakage) | 100 | nA | VGE=+20V (Max.) |
| IGES(R) (Gate Reverse Leakage) | -100 | nA | VGE=-20V (Max.) |
| Electrical Characteristics (Dynamic) | |||
| Cies (Input Capacitance) | 3363 | pF | VGE=0V, VCE=25V, f=1.0MHz (Typ.) |
| Coes (Output Capacitance) | 206 | pF | (Typ.) |
| Cres (Reverse Transfer Capacitance) | 92 | pF | (Typ.) |
| Qg (Gate Charge) | 179 | nC | VCC=520V, ICE=50A, VGE=15V (Typ.) |
| Qge (Gate-Emitter Charge) | 31 | nC | (Typ.) |
| Qgc (Gate-Collector Charge) | 87 | nC | (Typ.) |
| IC(SC) (Short Circuit Collector Current) | 469 | A | VGE=15V,VCC400V, tSC4s,TJ175 (Max.) |
| IGBT Switching Characteristics (TJ=25) | |||
| td(on) (Turn-on Delay Time) | 24 | ns | IC=50A, VCC=400V, VGE=15V, Rg=5 (Typ.) |
| tr (Rise Time) | 86 | ns | (Typ.) |
| td(off) (Turn-Off Delay Time) | 122 | ns | (Typ.) |
| tf (Fall Time) | 74 | ns | (Typ.) |
| Eon (Turn-On Switching Loss) | 1.38 | mJ | (Typ.) |
| Eoff (Turn-Off Switching Loss) | 1.14 | mJ | (Typ.) |
| Ets (Total Switching Loss) | 2.52 | mJ | (Typ.) |
| IGBT Switching Characteristics (TJ=175) | |||
| td(on) (Turn-on Delay Time) | 33 | ns | IC=50A, VCC=400V, VGE=15V, Rg=5 (Typ.) |
| tr (Rise Time) | 97 | ns | (Typ.) |
| td(off) (Turn-Off Delay Time) | 146 | ns | (Typ.) |
| tf (Fall Time) | 84 | ns | (Typ.) |
| Eon (Turn-On Switching Loss) | 1.65 | mJ | (Typ.) |
| Eoff (Turn-Off Switching Loss) | 1.32 | mJ | (Typ.) |
| Ets (Total Switching Loss) | 2.97 | mJ | (Typ.) |
| Diode Characteristics (TJ=25) | |||
| Trr (Reverse Recovery Time) | 98 | ns | IF=50A, VCC=400V, di/dt=200A/s (Typ.) |
| Qrr (Reverse Recovery Charge) | 1580 | C | (Typ.) |
| Irrm (Reverse Recovery Current) | 26 | A | (Typ.) |
| Diode Characteristics (TJ=175) | |||
| Trr (Reverse Recovery Time) | 104 | ns | IF=50A, VCC=400V, di/dt=200A/s (Typ.) |
| Qrr (Reverse Recovery Charge) | 1640 | C | (Typ.) |
| Irrm (Reverse Recovery Current) | 27 | A | (Typ.) |
2509181737_HXY-MOSFET-BIDW50N65T-HXY_C49003330.pdf
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