Durable HXY MOSFET Z0109NN6AA4-HXY offering robust dvdt rate designed for industrial and consumer safety devices
Key Attributes
Model Number:
Z0109NN6AA4-HXY
Product Custom Attributes
Mfr. Part #:
Z0109NN6AA4-HXY
Package:
SOT-223
Product Description
Product Overview
The Z0109NN6AA4 thyristors offer a high dv/dt rate with strong resistance to electromagnetic interference. They are particularly recommended for applications such as residual current circuit breakers, hair straighteners, and igniters.
Product Attributes
- Brand: HUAXUANYANG HXY
- Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
- Material: Plastic-Encapsulate
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDRM /VRRM | Repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | 1.0 | A | |||
| ITSM | Non repetitive surge peak on-state current | t =20ms Tj =25C | 8 | A | ||
| I2t | I2t for fusing | t =10 ms | 2 | A2s | ||
| (dl/dt)c | Critical-rate of rise of commutation current | IG=2IGT t 100ns | 100 | A/s | ||
| PG(AV) | Average Gate Power Dissipation | Tj =125C | 0.4 | W | ||
| Tj | Junction Temperature | 125 | C | |||
| Tstg | Storage Temperature | -40 | 150 | C | ||
| Electrical Characteristics (Tj=25C unless otherwise specified) | ||||||
| IDRM,IRRM | Repetitive Peak Off-State Current Repetitive Peak Reverse Current | VDRM=VRRM Tj =25C | 5 | mA | ||
| IDRM,IRRM | Repetitive Peak Off-State Current Repetitive Peak Reverse Current | VDRM=VRRM Tj =125C | 1 | mA | ||
| VTM | On-state voltage | IT=1A,tp=380s | 1.65 | V | ||
| IGT | Gate trigger current | VD=12V,RL=100 | 0.8 | mA | ||
| VGT | Gate trigger voltage | VD=12V,RL=100 | 0.8 | V | ||
| IH | Holding current | VD=12V,IGT=100mA | 30 | mA | ||
| dV/dt | Critical-rate of rise of commutation voltage | VDM=67%VDRM Gate open Tj =125C | 20 | V/s | ||
| (dl/dt)c | Rate of change of commutating voltage | VDM=400V, Tj =125C | 5.4 | A/ms | ||
| tgt | Turn-on time | ITM =16A ,VDM=VDRM tp=20 s IG =0.1A,dlG/dt=5A/S | 2 | s | ||
2511211720_HXY-MOSFET-Z0109NN6AA4-HXY_C52988529.pdf
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