IGBT Device HXY MOSFET AOK50B65H1 650V 50A Suitable for UPS EV Chargers and Solar String Inverters
Key Attributes
Model Number:
AOK50B65H1
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
110ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
13pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
71nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
510uJ
Turn-On Energy (Eon):
1.35mJ
Input Capacitance(Cies):
1.916nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
139pF
Mfr. Part #:
AOK50B65H1
Package:
TO-247
Product Description
Product Overview
The AOK50B65H1 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring easy paralleling capability due to its positive temperature coefficient in VCESAT. It offers low EMI, low gate charge, and low saturation voltage, making it suitable for UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters. The device features a maximum junction temperature of 175C.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: AOK50B65H1
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 80 | A | ||
| TC = 100C | 50 | A | ||||
| ICM | Pulsed collector current | TC = 25C | 200 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 80 | A | ||
| TC = 100C | 50 | A | ||||
| IFM | Diode pulsed current | TC = 25C | 200 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | |||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| TC = 100C | 129 | W | ||||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case | IGBT | 0.65 | C/W | ||
| RJC | Diode Thermal resistance: junction - case | Diode | 0.58 | C/W | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | 1.6 | 2.1 | V | |
| VGE = 15V , IC = 50A ,TVJ = 125C | 1.93 | - | V | |||
| VGE = 15V , IC = 50A ,TVJ = 175C | 2.0 | - | V | |||
| VF | Diode forward voltage | VGE = 0V , IC = 50A | 1.85 | - | V | |
| VGE = 0V , IC = 50A ,TVJ = 125C | 1.6 | - | V | |||
| VGE = 0V , IC = 50A ,TVJ = 175C | 1.45 | - | V | |||
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 50 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE = 20V, IC = 50A | 56 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 1916 | - | pF | |
| Coes | Output Capacitance | 139 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 13 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 50A | 71 | - | nC | |
| Qge | Gate to Emitter charge | 10 | - | nC | ||
| Qgc | Gate to Collector charge | 21 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 50A, RG(off) = 12,RG(on) = 12 | 17 | - | ns | |
| tr | Turn-On Rise Time | 30 | - | ns | ||
| td(off) | Turn-Off DelayTime | 110 | - | ns | ||
| tf | Turn-Off Fall Time | 34 | - | ns | ||
| Eon | Turn-on energy | 1.35 | - | mJ | ||
| Eoff | Turn-off energy | 0.51 | - | mJ | ||
| Ets | Total switching energy | 1.86 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 50 A, di/dt = 400 A/S | 56 | - | ns | |
| Qrr | Reverse recovery charge | 0.27 | - | mC | ||
| Irrm | Peak reverse recovery current | 8 | - | A | ||
2509181602_HXY-MOSFET-AOK50B65H1_C49003323.pdf
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