86--136 6733 2386
quality Durable SCR thyristors HXY MOSFET X0405MF with 600 volt rating and plastic encapsulate package TO126 factory
quality Durable SCR thyristors HXY MOSFET X0405MF with 600 volt rating and plastic encapsulate package TO126 factory

Durable SCR thyristors HXY MOSFET X0405MF with 600 volt rating and plastic encapsulate package TO126

Key Attributes
Model Number: X0405MF
Product Custom Attributes
Holding Current (Ih):
3mA
Current - Gate Trigger(Igt):
90uA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
35A@50Hz
Operating Temperature:
-40℃~+110℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
X0405MF
Package:
TO-126
Product Description

Product Overview

The X0405 SCR series thyristors offer a high dv/dt rate and strong resistance to electromagnetic interference. They are particularly recommended for applications such as straight hair appliances and igniters.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS CO.,LTD
  • Product ID: X0405MF
  • Package: TO-126
  • Origin: Shenzhen, China
  • Material: Plastic-Encapsulate
  • Website: www.hxymos.com
  • Product Marking: X0405MF
  • Packing Method: Bulk
  • Quantity per Pack: 2500 PCS

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
Storage junction temperature range Tstg (Ta=25 unless otherwise noted) -40 150
Operating junction temperature range Tj (Ta=25 unless otherwise noted) -40 110
Repetitive peak off-state voltage VDRM (Tj ) 600 V
Repetitive peak reverse voltage VRRM (Tj ) 600 V
RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM 35 A
Gate trigger current IGT VD=12V, RL=0.8 90 mA
Gate trigger voltage VGT VD=12V, RL=0.8 0.8 V
Gate non-trigger voltage VGD VD=1/2VDRM 0.2 V
Gate controlled turn-on voltage VIH IT=100mA 0.8 V
Rate of rise of off-state voltage dV/dt VD=75%VDRM, Tj=110C, RGK=1K 20 V/s
Peak on-state voltage VTM IT=4A 1.6 V
Off-state current IDRM VD=VDRM, RGK=1k 0.1 mA
Reverse current IRRM VRRM, RGK=1k 0.1 mA
Symbol Dimensions In Millimeters Dimensions In Inches
A 2.500 - 2.900 0.098 - 0.114
A1 1.100 - 1.500 0.043 - 0.059
b 0.660 - 0.860 0.026 - 0.034
b1 1.170 - 1.370 0.046 - 0.054
c 0.450 - 0.600 0.018 - 0.024
D 7.400 - 7.800 0.291 - 0.307
E 10.600 - 11.000 0.417 - 0.433
e 4.480 - 4.680 0.176 - 0.184
e1
h 0.000 - 0.300 0.000 - 0.012
L 15.300 - 15.700 0.602 - 0.618
L1 2.100 - 2.300 0.083 - 0.091
P 3.900 - 4.100 0.154 - 0.161
3.000 - 3.200 0.118 - 0.126
2.290 TYP 0.090 TYP

2508121550_HXY-MOSFET-X0405MF_C50275348.pdf

Related Products
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits factory
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
quality High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications factory
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.