Switching Application Thyristor HXY MOSFET MCR100-6 Plastic Encapsulated SOT23 Package
Key Attributes
Model Number:
MCR100-6
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
60uA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
400V
Current - Surge(Itsm@f):
8A
SCR Type:
-
Gate Trigger Voltage (Vgt):
800mV
Operating Temperature:
-
Mfr. Part #:
MCR100-6
Package:
SOT-23
Product Description
Product Overview
The MCR100-6 and MCR100-8 are plastic-encapsulated thyristors designed for general-purpose switching applications. They offer an RMS on-state current up to 0.8A and are available in a SOT-23 package.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Material: Plastic-Encapsulate
- Model Series: MCR100-6, MCR100-8
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Part | Value | Unit | Test Conditions |
| VDRM / VRRM | Repetitive peak off-state voltage / Repetitive peak reverse voltage | MCR100-6 | 400 | V | |
| VDRM / VRRM | Repetitive peak off-state voltage / Repetitive peak reverse voltage | MCR100-8 | 600 | V | |
| VEBO | Emitter-Base Voltage | 7 | V | ||
| IT(RMS) | RMS on-state current | 0.8 | A | (T=60) | |
| ITSM | Non repetitive surge peak on-state current | 8 | A | (tp=10ms) | |
| IGM | Peak gate current | 0.2 | A | (tp=20s,Tj=110) | |
| PGM | Peak gate power | 500 | mW | (tp=20s,Tj=110) | |
| PG(AV) | Average gate power dissipation | 100 | mW | (Tj=110) | |
| TJ | Operation Junction Temperature Range | -40+110 | |||
| Tstg | Storage Temperature Range | -40+150 | |||
| VTM | On state voltage | 1.7 | V | ITM=1A ,tp=380S | |
| VGT | Gate trigger voltage | 0.8 | V | VAK=7V | |
| V(BR)EBO | Peak Repetitive forward and Reverse blocking voltage | MCR100-6 | 400 | V | IDRM/IRRM=100A |
| V(BR)EBO | Peak Repetitive forward and Reverse blocking voltage | MCR100-8 | 600 | V | IDRM/IRRM=100A |
| IDRM / IRRM | Peak forward or reverse blocking Current | 10 | A | VAK=VDRM or VRRM | |
| IH | Holding current | 5 | mA | IHL=20mA ,VAK =7V | |
| IGT | Gate trigger current | 1560 | A | VAK=7V |
2509181603_HXY-MOSFET-MCR100-6_C5184415.pdf
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