high frequency switching transistor Jilin Sino Microelectronics JS65R170FM with avalanche tested
Key Attributes
Model Number:
JS65R170FM
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1pF
Number:
-
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
1.665nF
Pd - Power Dissipation:
34W
Gate Charge(Qg):
38.5nC@10V
Mfr. Part #:
JS65R170FM
Package:
TO-220MF
Product Description
Product Overview
The JS65R170M is a N-channel enhancement mode field-effect transistor designed for high-frequency switching applications. It features low gate charge, low Crss, fast switching speed, and improved dv/dt capability. The product is 100% avalanche tested and RoHS compliant. Applications include high frequency switching mode power supplies, electronic ballasts, and LED power supplies.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
- Origin: China
Technical Specifications
| Order Code | Marking | Package | ID (20A) | VDSS (650V) | Rdson-max (@Vgs=10V) (0.17) | Qg-typ (38.5nC) |
| JS65R170FM-F-B | N/A | TO-220MF | 20A | 650V | 0.17 | 38.5nC |
| JS65R170FM-F2-B | N/A | TO-220MF-K2 | 20A | 650V | 0.17 | 38.5nC |
| JS65R170WM-GE-B | N/A | TO-247 | 20A | 650V | 0.17 | 38.5nC |
| JS65R170ABM-GD-B | N/A | TO-3PB | 20A | 650V | 0.17 | 38.5nC |
| JS65R170CM-C-B | N/A | TO-220C | 20A | 650V | 0.17 | 38.5nC |
| JS65R170BM-B-B | N/A | TO-262 | 20A | 650V | 0.17 | 38.5nC |
| JS65R170SM-S-B | N/A | TO-263 | 20A | 650V | 0.17 | 38.5nC |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Note |
| Drain-Source Voltage | VDSS | 650 | V | |
| Drain Current - continuous | ID | 20* | A | T=25 |
| Drain Current - continuous | ID | 12* | A | T=100 |
| Drain Current - pulse | IDM | 60* | A | (note 1) |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 484 | mJ | (note 2) |
| Avalanche Current | IAR | 3.5 | A | (note 1) |
| Repetitive Avalanche Energy | EAR | 0.7 | mJ | (note 1) |
| Peak Diode Recovery dv/dt | dv/dt | 15 | V/ns | (note 3) |
| Power Dissipation | PD | 151 | W | TC=25 |
| Power Dissipation - Derate | 1.208 | W/ | above 25 | |
| Operating and Storage Temperature Range | TJ,TSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V, TC=125 | - | - | 100 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.5 | - | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=10A | - | 0.15 | 0.17 | |
| Forward Transconductance | gfs | VDS = 40V, ID=10Anote 4 | - | 15 | - | S |
| Input capacitance | Ciss | VDS=100V, VGS =0V, f=1.0MHZ | - | 1665 | - | pF |
| Output capacitance | Coss | VDS=100V, VGS =0V, f=1.0MHZ | - | 65 | - | pF |
| Reverse transfer capacitance | Crss | VDS=100V, VGS =0V, f=1.0MHZ | - | 1 | - | pF |
| Turn-On delay time | td(on) | VDD=400V,ID=20A,RG=25, VGS=10V note 45 | - | 15 | - | ns |
| Turn-On rise time | tr | VDD=400V,ID=20A,RG=25, VGS=10V note 45 | - | 59 | - | ns |
| Turn-Off delay time | td(off) | VDD=400V,ID=20A,RG=25, VGS=10V note 45 | - | 121 | - | ns |
| Turn-Off Fall time | tf | VDD=400V,ID=20A,RG=25, VGS=10V note 45 | - | 44 | - | ns |
| Total Gate Charge | Qg | VDS =520V , ID=20A VGS =10V note 45 | - | 38.5 | - | nC |
| Gate-Source charge | Qgs | VDS =520V , ID=20A VGS =10V note 45 | - | 8 | - | nC |
| Gate-Drain charge | Qgd | VDS =520V , ID=20A VGS =10V note 45 | - | 15 | - | nC |
| Intrinsic gate resistance | RG | f = 1 MHz open drain | - | 12 | - | |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 20 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 60 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=20A | - | 0.9 | 1.2 | V |
| Reverse recovery time | trr | Vr=400V, IF= IS dIF/dt=100A/s (note 4) | - | 423 | - | ns |
| Reverse recovery charge | Qrr | Vr=400V, IF= IS dIF/dt=100A/s (note 4) | - | 5.3 | - | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.83 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62 | /W |
Notes
- Pulse width limited by maximum junction temperature
- IAS=3.5A, VDD=50V, RG=25 ,Starting TJ=25
- ISD20A,di/dt300A/s,VDDBVDSS, Starting TJ=25
- Pulse TestPulse Width 300s,Duty Cycle2
- Essentially independent of operating temperature
2409280032_Jilin-Sino-Microelectronics-JS65R170FM_C2693272.pdf
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