Plastic Package HXY MOSFET BT134-800E Triac with High Voltage Blocking and Thermal Cycling Performance
Key Attributes
Model Number:
BT134-800E
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
20A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134-800E
Package:
TO-252-2L
Product Description
BT134-800E Thyristor
Glass passivated triacs in a plastic package, designed for high bidirectional transient and blocking voltage capability and excellent thermal cycling performance. Ideal for motor control, industrial and domestic lighting, heating, and static switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Material: Plastic-Encapsulate
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| VDRM /VRRM | Repetitive peak off-state voltage | (Ta=25C unless otherwise noted) | 800 | V |
| IGM | Peak Gate Current | - | A | |
| VGM | Peak gate voltage | - | V | |
| PGM | Peak gate power | 0.5 | W | |
| Tj G(AV) | Junction Temperature | -40 ~ 125 | C | |
| IT(RMS) | RMS on-state current | - | A | |
| ITSM | Non repetitive surge peak on-state current | t = 2ms T j =25 C | 20 | A |
| I t | I t for fusing | t = 16.7ms T j =25 C | 16 | A |
| I t | I t for fusing | t = 10 ms | 2 | As |
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT tr100ns F=120Hz | 50 | A/us |
| dV/dt | Critical-rate of rise of commutation voltage | Tj =125 C | 0.6 | V/us |
| Tstg | Storage Temperature | -40 ~ 150 | C | |
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM T j =125 C | 0.8 | mA |
| VGD | Gate non-trigger voltage | VD= 1/2V DRM | 5 | V |
| VTM | On-state voltage | IT=2A,tp=380us | 1.65 | V |
| IGT | Gate trigger current | T2(+), G(+) VD=12V RL=100 | 10 | mA |
| VGT | Gate trigger voltage | T2(+), G(+) VD=12V RL=100 | 2.5 | V |
| IH | Holding current | VD=12V,IGT=100mA | 30 | mA |
| t gt | Turn-on time | ITM =16A ,VDM=V DRM VDM=67%V DRM(MAX) IG =0.1A,dlG/dt=5A/uS | 2 | us |
| (dl/dt)c | Critical-rate of rise of commutation current | Tj =125 C | 5.4 | A/ms |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 0.483 TYP. | 0.190 TYP. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 TYP. | 0.114 TYP. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 TYP. | 0.063 TYP. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 TYP. | 0.211 TYP. |
2508201703_HXY-MOSFET-BT134-800E_C50313825.pdf
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