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quality Jilin Sino Microelectronics JCS640C MOSFET designed for switching in electronic lamp ballasts and UPS factory
quality Jilin Sino Microelectronics JCS640C MOSFET designed for switching in electronic lamp ballasts and UPS factory

Jilin Sino Microelectronics JCS640C MOSFET designed for switching in electronic lamp ballasts and UPS

Key Attributes
Model Number: JCS640C
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
-
Output Capacitance(Coss):
245pF
Input Capacitance(Ciss):
1.76nF
Pd - Power Dissipation:
140W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
JCS640C
Package:
TO-220
Product Description

Product Overview

The JCS640 is an N-channel enhancement mode MOSFET designed for high-efficiency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd.
  • Certifications: RoHS

Technical Specifications

Order Code Package Marking ID (A) VDSS (V) Rds(on)-max (@Vgs=10V) (Ω) Qg-typ (nC)
JCS640S-S-B TO-263 JCS640S 18.0 200 0.18 47
JCS640S-S-BR TO-263 JCS640S 18.0 200 0.18 47
JCS640S-S-A TO-263 JCS640S 18.0 200 0.18 47
JCS640S-S-AR TO-263 JCS640S 18.0 200 0.18 47
JCS640C-C-B TO-220C N/A 18.0 200 0.18 47
JCS640C-C-BR TO-220C N/A 18.0 200 0.18 47
JCS640F-F-B TO-220MF N/A 18.0 200 0.18 47
JCS640F-F-BR TO-220MF N/A 18.0 200 0.18 47
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage BVDSS ID=250A, VGS=0V 200 - - V
Gate Threshold Voltage VGS(th) VDS = VGS , ID=250A 2.0 - 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=9.0A - 0.15 0.18 Ω
Input capacitance Ciss - - 1330 1760 pF
Output capacitance Coss - - 181 245 pF
Reverse transfer capacitance Crss VDS=25V, VGS=0V, f=1.0MHZ - 48 65 pF
Total Gate Charge Qg - - 47 62 nC
Parameter Symbol Value Unit
Thermal Resistance, Junction to Case (JCS640C/S) Rth(j-c) 0.89 /W
Thermal Resistance, Junction to Case (JCS640F) Rth(j-c) 2.85 /W
Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 /W

2410121215_Jilin-Sino-Microelectronics-JCS640C_C2693280.pdf

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