General Purpose Switching Thyristor HXY MOSFET MCR100-8WMX-HXY Plastic Encapsulated SOT 223 Package
Product Overview
The MCR100-8WMX is a plastic-encapsulated thyristor from HUAXUANYANG ELECTRONICS. Designed for general-purpose switching applications, it offers an RMS on-state current of up to 0.8A and a repetitive peak off-state voltage of 800V. This thyristor is suitable for various electronic circuits requiring reliable switching performance.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Product ID: MCR100-8WMX
- Package: SOT-223
- Origin: Shenzhen, China
- Material: Plastic-Encapsulate
Technical Specifications
| Symbol | Parameter | Test Condition | Min | Typ | Max | Unit |
| VDRM | Repetitive peak off-state voltage | 800 | V | |||
| VRRM | Repetitive peak reverse voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | T=60 | 0.8 | A | ||
| ITSM | Non repetitive surge peak on-state current | tp=10ms | 8 | A | ||
| TJ | Operation Junction Temperature Range | -40 | +125 | |||
| Tstg | Storage Temperature Range | -40 | +150 | |||
| IGT | Gate Trigger Current | VD=12V, RL=100 | 0.1 | mA | ||
| VGT | Gate Trigger Voltage | VD=12V, RL=100 | 3 | V | ||
| VGD | Gate Trigger Voltage | VD=1/2VDRM, RGK=1k | 0.2 | V | ||
| IH | Holding Current | IT=100mA | - | - | mA | |
| dV/dt | Critical Rate of Rise of Off-State Voltage | VD=75%VDRM, Tj=110C, RGK=1K | 20 | V/s | ||
| VTM | Peak On-State Voltage | IT=100mA | 1.6 | V | ||
| IDRM | Peak Off-State Current | VD=VDRM, RGK=1k | - | - | mA | |
| IRRM | Peak Reverse Current | VRRM, RGK=1k | - | - | mA |
Ordering Information
| Product ID | Pack | Qty(PCS) |
| MCR100-8WMX | SOT-223 | 3000 |
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| A | 1.800 | 0.071 | ||
| A1 | 0.020 | 0.100 | 0.001 | 0.004 |
| A2 | 1.500 | 1.700 | 0.059 | 0.067 |
| b | 0.660 | 0.840 | 0.026 | 0.033 |
| b1 | 2.900 | 3.100 | 0.114 | 0.122 |
| c | 0.230 | 0.350 | 0.009 | 0.014 |
| D | 6.300 | 6.700 | 0.248 | 0.264 |
| E | 6.700 | 7.300 | 0.264 | 0.287 |
| E1 | 3.300 | 3.700 | 0.130 | 0.146 |
| e | 2.300(BSC) | 0.091(BSC) | ||
| L | 0.750 | 0.030 | ||
| 0 | 10 | 0 | 10 |
2508121550_HXY-MOSFET-MCR100-8WMX-HXY_C50275353.pdf
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