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quality Heating And Lighting Solutions Using HXY MOSFET BT137S-600D-HXY Plastic Encapsulated Triac Component factory
quality Heating And Lighting Solutions Using HXY MOSFET BT137S-600D-HXY Plastic Encapsulated Triac Component factory

Heating And Lighting Solutions Using HXY MOSFET BT137S-600D-HXY Plastic Encapsulated Triac Component

Key Attributes
Model Number: BT137S-600D-HXY
Product Custom Attributes
Mfr. Part #:
BT137S-600D-HXY
Package:
TO-252-2L
Product Description

Product Overview

Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.

Product Attributes

  • Brand: HUAXUANYANG HXY
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Package: TO-252-2L
  • Material: Plastic-Encapsulate

Technical Specifications

ParameterUnitValueConditions
VDRM /VRRM Repetitive peak off-state voltageV600Tj =125 C
IDRM,IRRM Repetitive Peak Off-State Current Repetitive Peak Reverse CurrentmA0.8VDRM=VRRM T =25 j C
VDRM=VRRM T =125 j CmA1
VGD Gate non-trigger voltageV0.2VD= 1/2V DRM
VTM On-state voltageV1.65IT= 6A,tp=380us
I T2(+), G(+)A5Tj =125 C
II T2(+), G(-)A10Tj =125 C
III T2(-), G(-)A5Tj =125 C
IV T2(-), G(+)A5Tj =125 C
IGT Gate trigger currentmA0.8VD=12V RL=100
I T2(+), G(+)mA2
II T2(+), G(-)mA2
III T2(-), G(-)mA2
IV T2(-), G(+)mA2
VGT Gate trigger voltageV0.8VD=12V RL=100
I T2(+), G(+)V2.5
II T2(+), G(-)V2.5
III T2(-), G(-)V2.5
IV T2(-), G(+)V2.5
IH Holding currentmA30VD=12V ,IGT=100mA
dI/dt Critical-rate of rise of commutation currentA/ us50IG=2IGT tr100ns F=120Hz
dV/dt Rate of change of commutating voltageV/us20VDM=67%V DRM(MAX) T =125 j C
t gt Turn-on timeus2ITM =16A ,VDM=V DRM T =125 j C
(dl/dt)c Critical-rate of rise of commutation voltageA/ms5.4Gate open
dV/dtV/us20Gate open
IT(RMS) RMS on-state currentA6T =125 j C
ITSM Non repetitive surge peak on-state currentA50t =16.7ms Tj =25C
I t for fusingA s2t =10 ms tp=20 s Tj =125C
P G(AV) Average Gate Power DissipationW0.5Tj =125 C
Tj Junction TemperatureC-40 ~ 125
Tstg Storage TemperatureC-40 ~ 150

2508121550_HXY-MOSFET-BT137S-600D-HXY_C50275346.pdf

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