thyristor HXY MOSFET Z0110MN5AA4-HXY featuring 5mA repetitive peak off state current for stable switching
Key Attributes
Model Number:
Z0110MN5AA4-HXY
Product Custom Attributes
Mfr. Part #:
Z0110MN5AA4-HXY
Package:
SOT-223
Product Description
Product Description
The Z0110MN5AA4 thyristors offer a high dv/dt rate and strong resistance to electromagnetic interference. They are particularly recommended for applications such as residual current circuit breakers, straight hair curlers, and igniters.
Product Attributes
- Brand: HUAXUANYANG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Plastic-Encapsulate
- Model: Z0110MN5AA4
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| VDRM /VRRM | Repetitive peak off-state voltage | 600 | V | |
| IT(RMS) | RMS on-state current | 1.0 | A | |
| IGT | Gate trigger current | VD=12V,RL=100 | 0.8 | mA |
| VGT | Gate trigger voltage | VD=12V,RL=100 | 2.5 | V |
| IH | Holding current | VD=12V,IGT=100mA | 30 | mA |
| VTM | On-state voltage | IT=1A,tp=380s | 1.65 | V |
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM, Tj =25C | 5 | mA |
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM, Tj =125C | 1 | mA |
| I2t | It for fusing | t=10ms | 2 | As |
| ITSM | Non repetitive surge peak on-state current | t=16.7ms, Tj =25C | 8 | A |
| PG(AV) | Average Gate Power Dissipation | 0.4 | W | |
| Tj | Junction Temperature | -40 ~ 150 | C | |
| Tstg | Storage Temperature | -40 ~ 150 | C | |
| (dV/dt)c | Critical-rate of rise of commutating voltage | Gate open, VDM=67%VDRM, Tj =125C | 20 | V/s |
| (dl/dt)c | Critical-rate of rise of commutation current | IG =0.1A,dlG/dt=5A/uS, Tj =125C | 5.4 | A/ms |
| tgt | Turn-on time | ITM =16A ,VDM=VDRM(MAX), IG =0.1A,dlG/dt=5A/uS | 2 | s |
2511211720_HXY-MOSFET-Z0110MN5AA4-HXY_C52988531.pdf
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