Durable Plastic Encapsulated Thyristor HXY MOSFET BT136S-600E for Lighting Heating and Motor Control
Key Attributes
Model Number:
BT136S-600E
Product Custom Attributes
Holding Current (Ih):
20mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
3A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
27A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.45V
Mfr. Part #:
BT136S-600E
Package:
TO-252-2L
Product Description
BT136S-600E Plastic-Encapsulate Thyristors
Glass passivated triacs in a plastic envelope, designed for high bidirectional transient and blocking voltage capability with excellent thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Model: BT136S-600E
- Origin: Shenzhen, China
- Package: TO-252-2L (TO-252-2(DPAK))
- Marking: BT136S-600E
- Quantity per Pack: 2500 PCS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Maximum Ratings (Ta=25C unless otherwise noted) | |||||
| RMS on-state current (full sine wave) | IT(RMS) | TC=107C | 25 | A | |
| Non repetitive surge peak on-state current (full sine wave) | ITSM | Tj =25C, t=16.7ms | 27 | A | |
| Peak gate current | IGM | t=20ms | 2 | A | |
| Average gate power dissipation | PG(AV) | Tj=125C | 0.5 | W | |
| Storage junction temperature range | Tstg | -40 | +150 | C | |
| Operating junction temperature range | Tj | -40 | +125 | C | |
| Electrical Characteristics (Ta=25C unless otherwise specified) | |||||
| Rated repetitive peak off-state/reverse voltage | VDRM,VRRM | ID=10A | 600 | V | |
| Rated repetitive peak off-state current | IDRM, IRRM | VD=620V | 10 | A | |
| On-state voltage | VTM | IT=5A | 1.7 | V | |
| Gate trigger current | IGT | VD=12V, RL=100 | 10 | mA | |
| Gate trigger voltage | VGT | VD=12V, RL=100 | 1.45 | V | |
| Holding current | IH | IT =100mA, IG=20mA | 20 | mA | |
Package Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 0.483 TYP. | 0.190 TYP. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 TYP. | 0.114 TYP. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 TYP. | 0.063 TYP. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 TYP. | 0.211 TYP. |
2511171529_HXY-MOSFET-BT136S-600E_C50177045.pdf
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