Switching thyristor HXY MOSFET BT131-800D with 800V blocking voltage and 1 amp RMS on state current
Key Attributes
Model Number:
BT131-800D
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
8mA
Average Gate Power Dissipation (PG(AV)):
400mW
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
10A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT131-800D
Package:
SOT-223-2L
Product Description
Product Overview
The BT131-800D is a general-purpose bidirectional switching thyristor from HUAXUANYANG ELECTRONICS. It features a blocking voltage up to 800V and an RMS on-state current of 1A. This plastic-encapsulated thyristor is suitable for various general-purpose switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Model: BT131-800D
- Origin: Shenzhen, China
- Package: SOT-223-2L
- Material: Plastic-Encapsulate
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
| Features | ||||
| Blocking voltage | VDRM /VRRM | 800 | V | Repetitive peak off-state voltage |
| RMS on-state current | IT(RMS) | 1 | A | |
| Peak Gate Current | IGM | - | A | |
| Peak gate voltage | VGM | - | V | |
| Peak gate power | PGM | 0.4 | W | |
| Junction Temperature | Tj | -40 ~ 125 | C | |
| Average Gate Power Dissipation | G(AV) | - | W | |
| Maximum Ratings | ||||
| RMS on-state current | IT(RMS) | 1 | A | (Ta=25C unless otherwise noted) |
| Non repetitive surge peak on-state current | ITSM | 10 | A | t =20ms Tj =25C |
| I t for fusing | It | 0.8 | As | t =16.7ms Tj =25C |
| Critical-rate of rise of commutation current | dl/dt | 1 | A/us | IG=2IGT tr100ns F=120Hz |
| Storage Temperature | Tstg | -40 ~ 150 | C | |
| Electrical Characteristics | ||||
| Repetitive Peak Off-State Current | IDRM,IRRM | 0.8 | mA | VDRM=5V, Tj =25C |
| Repetitive Peak Off-State Current | IDRM,IRRM | 50 | mA | VDRM=800V, Tj =125C |
| Gate non-trigger voltage | VGD | 0.2 | V | VD= 1/2V DRM |
| On-state voltage | VTM | 0.8 | V | IT=0.8A,tp=380us |
| Gate trigger current | IGT | 0.8 | mA | T2(+), G(+) VD=12V RL=100 |
| Gate trigger current | IGT | 0.8 | mA | T2(+), G(-) VD=12V RL=100 |
| Gate trigger current | IGT | 0.8 | mA | T2(-), G(-) VD=12V RL=100 |
| Gate trigger current | IGT | 0.8 | mA | T2(-), G(+) VD=12V RL=100 |
| Gate trigger voltage | VGT | 2.5 | V | T2(+), G(+) VD=12V RL=100 |
| Holding current | IH | 5 | mA | |
| Rate of change of commutating voltage | dV/dt | 20 | V/us | VDM=67%V DRM Tj =125C |
| Turn-on time | tgt | 2 | us | ITM =16A ,VDM=V DRM T =125C j |
| Critical-rate of rise of commutation voltage | (dl/dt)c | 5.4 | A/ms | V =400V jT =125 C DRM(MAX) |
| Package Outline Dimensions | ||||
| Dimension A | A | 1.80 | mm | Max. |
| Dimension A1 | A1 | 0.02 - 0.10 | mm | Min. - Max. |
| Dimension A2 | A2 | 1.50 - 1.70 | mm | Min. - Max. |
| Dimension b | b | 0.66 - 0.84 | mm | Min. - Max. |
| Dimension b2 | b2 | 2.90 - 3.10 | mm | Min. - Max. |
| Dimension c | c | 0.23 - 0.35 | mm | Min. - Max. |
| Dimension D | D | 6.30 - 6.70 | mm | Min. - Max. |
| Dimension E | E | 6.70 - 7.30 | mm | Min. - Max. |
| Dimension E1 | E1 | 3.30 - 3.70 | mm | Min. - Max. |
| Dimension e | e | 2.30 | BSC. | |
| Dimension e1 | e1 | 4.60 | BSC. | |
| Dimension L | L | 0.81 | mm | Min. |
| Dimension L1 | L1 | 0.25 | BSC. | |
| Dimension | 0 - 10 | |||
2508201703_HXY-MOSFET-BT131-800D_C50313594.pdf
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