NPN Silicon AF Transistor Array Infineon BC817UPNE6327HTSA1 with Two Internally Isolated Transistors
Key Attributes
Model Number:
BC817UPNE6327HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
170MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC817UPNE6327HTSA1
Package:
SC-74-6
Product Description
Product Overview
The BC817UPN is an NPN Silicon AF Transistor Array designed for AF stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and consists of two internally isolated NPN/PNP transistors in a single package. This component is Pb-free and RoHS compliant, qualified according to AEC Q101.
Product Attributes
- Brand: Infineon Technologies
- Material: NPN Silicon
- Certifications: AEC Q101, RoHS compliant
- Package: SC74
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 45 | V | |
| Collector-base voltage | VCBO | 50 | V | |
| Emitter-base voltage | VEBO | 5 | V | |
| Collector current | IC | 500 | mA | |
| Peak collector current, tp 10 ms | ICM | 1000 | mA | |
| Base current | IB | 100 | mA | |
| Peak base current | IBM | 200 | mA | |
| Total power dissipation - TS 115 C | Ptot | 330 | mW | |
| Junction temperature | Tj | 150 | C | |
| Storage temperature | Tstg | -65 ... 150 | C | |
| Junction - soldering point thermal resistance | RthJS | 105 | K/W | 1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) |
| Collector-emitter breakdown voltage | V(BR)CEO | 45 | V | IC = 10 mA, IB = 0 |
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 10 A, IE = 0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 10 A, IC = 0 |
| Collector-base cutoff current | ICBO | - | A | VCB = 25 V, IE = 0 ; VCB = 25 V, IE = 0 , TA = 150 C (50 A max) |
| Emitter-base cutoff current | IEBO | - | nA | VEB = 4 V, IC = 0 (100 nA max) |
| DC current gain | hFE | 160 - 400 | IC = 100 mA, VCE = 1 V (160 - 250); IC = 300 mA, VCE = 1 V (- 400) | |
| Collector-emitter saturation voltage | VCEsat | - | V | IC = 500 mA, IB = 50 mA (0.7 V max) |
| Base emitter saturation voltage | VBEsat | - | V | IC = 500 mA, IB = 50 mA (1.2 V max) |
| Transition frequency | fT | 170 | MHz | IC = 50 mA, VCE = 5 V, f = 100 MHz |
| Collector-base capacitance | Ccb | - | pF | f = 1 MHz, VBE = 10 V (6 pF max) |
| Emitter-base capacitance | Ceb | - | pF | VEB = 0.5 V, f = 1 MHz (60 pF max) |
2411111059_Infineon-BC817UPNE6327HTSA1_C3199064.pdf
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