Fast switching diode IDCHIP BAV70 suitable for general purpose electronic circuit applications
Key Attributes
Model Number:
BAV70
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
5mA
Reverse Leakage Current (Ir):
2.5uA@80V
Reverse Recovery Time (trr):
6ns
Diode Configuration:
-
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
8V
Pd - Power Dissipation:
2mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
2mA
Mfr. Part #:
BAV70
Package:
SOT-23
Product Description
Product Overview
The BAV70 is a fast switching diode designed for general-purpose switching applications. It offers high conductance and is suitable for various electronic circuits requiring rapid signal switching.
Product Attributes
- Brand: Not explicitly stated, but associated with Shenzhen Indreamchip Electronics Co., Ltd.
- Origin: Shenzhen, China
- Material: Plastic surface mounted package
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Maximum Ratings @TA=25 | ||||||
| Reverse voltage | VR | 8 | V | |||
| Forward Current | IF | 2 | mA | |||
| Peak Forward Surge Current | IFM(surge) | 5 | mA | |||
| Power Dissipation | PD | 2 | mW | |||
| Thermal Resistance Junction to Ambient Air | RJA | 5 | /W | |||
| Junction temperature | TJ | 1 | ||||
| Storage temperature range | TSTG | -55 | 150 | |||
| Electrical Characteristics @TA=25 | ||||||
| Reverse Breakdown Voltage | VR | 80 | V | IR=100A | ||
| Forward voltage | VF1 | 0.715 | V | IF=1mA | ||
| VF2 | 0.855 | V | IF=10mA | |||
| VF3 | 1 | V | IF=50mA | |||
| VF4 | 1.25 | V | IF=150mA | |||
| Reverse current | IR | 2.5 | A | VR=80V | ||
| Capacitance between terminals | CT | 1.5 | pF | VR=0, f=1MHz | ||
| Reverse recovery time | trr | 6 | ns | IF = IR = 10mA, Irr= 0.1 x IR, RL = 100 | ||
2409271333_IDCHIP-BAV70_C2848191.pdf
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