switching device Jilin Sino Microelectronics JCS12N60FT 220MF N channel MOSFET with low gate charge

Key Attributes
Model Number: JCS12N60FT-220MF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Number:
1 N-channel
Output Capacitance(Coss):
229pF
Input Capacitance(Ciss):
2.41nF
Pd - Power Dissipation:
51W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
JCS12N60FT-220MF
Package:
TO-220F-3
Product Description

Product Overview

The JCS12N60T is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd.
  • Certifications: RoHS

Technical Specifications

Order CodeMarkingPackageID (A)VDSS (V)Rds(on)_max (@Vgs=10V) ()Qg (nC)EAS (mJ)dv/dt (V/ns)PD (W)Rth(j-c) (/W)
JCS12N60CT-C-B / JCS12N60CT-C-BRN/ATO-220C12.06000.65398804.52500.5
JCS12N60FT-F-B / JCS12N60FT-F-BRN/ATO-220MF12.06000.65398804.52502.45
JCS12N60FT-F2-B / JCS12N60FT-F2-BRN/ATO-220MF-K212.06000.65398804.52502.45
JCS12N60ST-S-B / JCS12N60ST-S-BR / JCS12N60ST-S-A / JCS12N60ST-S-ARJCS12N60STTO-26312.06000.65398804.52500.5
JCS12N60BT-B-B / JCS12N60BT-B-BRN/ATO-26212.06000.65398804.52500.5

2409280101_Jilin-Sino-Microelectronics-JCS12N60FT-220MF_C272555.pdf

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