Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain
Key Attributes
Model Number:
BFR93AE6327HTSA1
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
6GHz
Type:
NPN
Current - Collector(Ic):
90mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFR93AE6327HTSA1
Package:
SOT-23-3
Product Description
Product Overview
The BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-free (RoHS compliant). This device is ESD sensitive and requires careful handling.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT23
- Certifications: AEC-Q101 available
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 12 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 2 | V | |
| Collector current | IC | 90 | mA | |
| Base current | IB | 30 | mA | |
| Total power dissipation | Ptot | 300 | mW | TS 111 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 130 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| Electrical Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 100 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 10 | A | VEB = 2.5 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 30 mA, VCE = 8 V, pulse measured |
| Transition frequency | fT | 4.5 - 6 | GHz | IC = 30 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.54 - 0.8 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.25 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 1.9 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 1.5 - 2.6 | dB | IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz |
| Power gain, maximum available | Gma | 14.5 - 9.5 | dB | IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz |
| Transducer gain | |S21e| | 12.5 - 7 | dB | IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 MHz |
| Third order intercept point at output | IP3 | 15 | dBm | IC = 30mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz |
| 1dB Compression point | P-1dB | 6 | dBm | IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz |
2410121848_Infineon-BFR93AE6327HTSA1_C513260.pdf
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