Switching Circuit Transistor Array Infineon BCR08PNH6327XTSA1 with NPN PNP Silicon Digital Transistors

Key Attributes
Model Number: BCR08PNH6327XTSA1
Product Custom Attributes
Input Resistor:
2.2kΩ
Resistor Ratio:
0.047
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR08PNH6327XTSA1
Package:
SOT-363-6
Product Description

Product Overview

The BCR08PN is a NPN/PNP Silicon Digital Transistor Array designed for switching circuits, inverters, interface circuits, and driver circuits. It features two internally isolated NPN and PNP transistors within a single package, each with built-in bias resistors (R1=2.2 k, R2=47 k). This Pb-free (RoHS compliant) and AEC Q101 qualified component offers a compact solution for various electronic applications.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT363
  • Certifications: AEC Q101, RoHS compliant
  • Material: Silicon

Technical Specifications

ParameterSymbolNPN/PNP Type (Typical)UnitNPN Type (Min/Typ/Max)PNP Type (Min/Typ/Max)
Maximum Ratings
Collector-emitter voltageVCEO50V
Collector-base voltageVCBO50V
Input forward voltageVi(fwd)20V
Input reverse voltageVi(rev)5V
DC collector currentIC100mA
Total power dissipation, TS = 115 CPtot250mW
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Thermal Resistance Junction - soldering pointRthJS≤ 140K/W
DC Characteristics
Collector-emitter breakdown voltageV(BR)CEO50Vmin.
Collector-base breakdown voltageV(BR)CBO50Vmin.
Collector cutoff currentICBO100nAmax.
Emitter cutoff currentIEBO164µAmax.
DC current gainhFE70-min.
Collector-emitter saturation voltageVCEsat0.3Vmax.
Input off voltageVi(off)0.4 / 0.8Vmin. / max.
Input on VoltageVi(on)0.5 / 1.1Vmin. / max.
Input resistorR12.2typ.
Resistor ratio R1/R2R1/R20.047-typ.
AC Characteristics
Transition frequencyfT170MHztyp.
Collector-base capacitanceCcb2pFtyp.

2410121720_Infineon-BCR08PNH6327XTSA1_C672122.pdf

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