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quality N channel transistor Jilin Sino Microelectronics JCS4N65FB 220MF for power supply and ballast circuits factory
quality N channel transistor Jilin Sino Microelectronics JCS4N65FB 220MF for power supply and ballast circuits factory

N channel transistor Jilin Sino Microelectronics JCS4N65FB 220MF for power supply and ballast circuits

Key Attributes
Model Number: JCS4N65FB-220MF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
124pF
Input Capacitance(Ciss):
900pF
Pd - Power Dissipation:
51.7W
Gate Charge(Qg):
16.3nC@10V
Mfr. Part #:
JCS4N65FB-220MF
Package:
TO-220F-3
Product Description

Product Overview

The JCS4N65B is a N-channel enhancement mode field-effect transistor designed for high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd
  • Certifications: RoHS

Technical Specifications

Order CodeMarkingPackageID (A)VDSS (V)Rds(on) Max () (Vgs=10V)Qg Typ (nC)
JCS4N65VB-V-B
JCS4N65VB-V-BR		N/AIPAK4.06502.416.3
JCS4N65RB-R-B
JCS4N65RB-R-BR
JCS4N65RB-R-A
JCS4N65RB-R-AR		JCS4N65RBDPAK4.06502.416.3
JCS4N65BB-B-B
JCS4N65BB-B-BR		N/ATO-2624.06502.416.3
JCS4N65SB-S-B
JCS4N65SB-S-BR
JCS4N65SB-S-A
JCS4N65SB-S-AR		JCS4N65SBTO-2634.06502.416.3
JCS4N65CB-C-B
JCS4N65CB-C-BR		N/ATO-220C4.06502.416.3
JCS4N65FB-F-B
JCS4N65FB-F-BR		N/ATO-220MF4.06502.416.3
JCS4N65FB-F2-B
JCS4N65FB-F2-BR		N/ATO-220MF-K24.06502.416.3
JCS4N65VB-V1-B
JCS4N65VB-V1-BR		N/AIPAK-S14.06502.416.3
ParameterSymbolValueUnitNotes
Drain-Source VoltageVDSS650V
Drain Current -continuous (Tc=25)ID4.0ALimited by maximum junction temperature
Drain Current -continuous (Tc=100)ID3.0 (for VB/RB/CB/SB/BB)
2.5 (for FB)		ALimited by maximum junction temperature
Gate-Source VoltageVGSS30V
Single Pulsed Avalanche EnergyEAS240mJL=25mH, IAS=4.0A, VDD=50V, RG=25, Starting TJ=25
Avalanche CurrentIAR4.0A
Repetitive Avalanche CurrentEAR10.0mJ
Peak Diode Recovery dv/dtdv/dt5.5V/nsISD 4.0A,di/dt 200A/s,VDDBVDSS, Starting TJ=25
Power Dissipation (TC=25)PD117.9 (for VB/RB/CB/SB/BB)
148.6 (for FB TO-220MF)
51.7 (for FB TO-220MF-K2)
42.4 (for FB TO-220MF-K2)		W
Insulation withstand voltage (t=1s; TC =25 C)VISO2500VFor TO-220MF and TO-220MF-K2
Operating and Storage Temperature RangeTJ, TSTG-55+150
Maximum Lead Temperature for Soldering PurposesTL300
ParameterSymbolTest ConditionsMinTypMaxUnit
Drain-Source VoltageBVDSSID=250A, VGS=0V650--V
Zero Gate Voltage Drain CurrentIDSSVDS=650V,VGS=0V, TC=25--10A
Zero Gate Voltage Drain CurrentIDSSVDS=500V, TC=125--100A
Gate Threshold VoltageVGS(th)VDS = VGS , ID=250A2.0-4.0V
Static Drain-Source On-ResistanceRDS(ON)VGS =10V , ID=2A-1.72.4
Forward TransconductancegfsVDS = 40V , ID=2A-4.1-S
Input capacitanceCissVDS=25V, VGS =0V, f=1.0MHZ-671.8900pF
Output capacitanceCossVDS=25V, VGS =0V, f=1.0MHZ-72.5124pF
Reverse transfer capacitanceCrssVDS=25V, VGS =0V, f=1.0MHZ-2.8312pF
Total Gate ChargeQgVDS =480V , ID=4A VGS =10V-16.332nC
Drain-Source Diode Forward VoltageVSDVGS=0V, IS=4.0A--1.4V
Reverse recovery timetrrVGS=0V, IS=4.0A dIF/dt=100A/s-480-ns
Reverse recovery chargeQrrVGS=0V, IS=4.0A dIF/dt=100A/s-2.08-C

2411201842_Jilin-Sino-Microelectronics-JCS4N65FB-220MF_C272522.pdf

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